A method of manufacturing a monolithic integrated circuit is provided. An example method includes: the formation of functional blocks within and on top of at least one wide-bandgap semiconductor material deposited on a silicon substrate, forming mutually separated interconnecting parts on top of the functional blocks, separating the functional blocks, and forming an electrically conductive connection between the substrate and a contact pad located on a top face of the interconnecting part associated with a functional block. The separation of functional blocks and forming the electrically conductive connection are performed after the formation of the mutually separated interconnecting parts.