H10P50/69

Method of manufacturing semiconductor device using underlayer for reducing defect in array region
12525475 · 2026-01-13 · ·

A method of manufacturing the same is provided. The method includes providing a substrate. The method also includes forming a target layer over the substrate. The method further includes forming a patterned mask structure over the target layer. In addition, the method includes forming an etching stop layer over the patterned mask structure. The method also includes forming an underlayer over the etching stop layer; and performing an etching process to pattern the target layer.