H10P72/742

Coated semiconductor dies

In examples, a chip scale package (CSP) comprises a semiconductor die; a conductive terminal coupled to the semiconductor die; and a non-conductive coat covering a backside of the semiconductor die and a sidewall of the semiconductor die. The non-conductive coat has a thickness of less than 45 microns.

Carrier film for semi-conductor wafer processing

A carrier film includes an adhesive layer, a core layer, and a release layer. The adhesive layer includes a hydrogenated styrene block copolymer having a storage modulus (G) of less than or equal to 400 kPa at 25 C., and a first polyolefin elastomer. The core layer includes a second polyolefin elastomer, and the release layer includes a polyolefin.

Wafer processing apparatus and wafer processing method

A wafer processing apparatus includes a rotating chuck rotatably installed on a driver, a vacuum chuck which is disposed on the rotating chuck and on which a wafer is seated, a chuck module installed in the rotating chuck to fix the wafer to the vacuum chuck, and a moving module configured to move the vacuum chuck or the chuck module to increase a gap between adjacent dies of the wafer.

Dynamic release tapes for assembly of discrete components

A method includes positioning a discrete component assembly on a support fixture of a component transfer system, the discrete component assembly including a dynamic release tape including a flexible support layer, and a dynamic release structure disposed on the flexible support layer, and a discrete component adhered to the dynamic release tape. The method includes irradiating the dynamic release structure to release the discrete component from the dynamic release tape.

CHIP PRODUCTION METHOD
20260096369 · 2026-04-02 ·

A chip production method in which a workpiece having a plurality of planned dividing lines set on a side of a front surface of a substrate and a functional layer formed on the front surface is divided along the planned dividing lines to produce chips, includes: applying a laser beam along the planned dividing lines to remove respective parts of the functional layer and form, in the substrate, respective processed grooves having a depth smaller than a finished thickness; processing a side of a back surface of the substrate to thin the substrate to the finished thickness; and after the processing, imparting an external force to the workpiece to divide the workpiece into a plurality of chips along the processed grooves.