Aspects disclosed in the detailed description include an integrated circuit (IC) package employing a metal block with metal interconnects thermally coupling a semiconductor die (die) to an interposer substrate for dissipating thermal energy in the die. The die is coupled to a package substrate to provide signal routing paths to the die. To facilitate additional dies being stacked in the IC package as a three-dimensional (3D) IC (3DIC) package, the IC package also includes an interposer substrate adjacent to the die. The interposer substrate supports providing additional signal routing paths to the package substrate. The interposer substrate also includes a metal block which comprises a plurality of metal layers and is thermally coupled to the die and a metal interconnect(s) in the interposer substrate to dissipate thermal energy from the die through the metal block and through the coupled metal interconnect(s).

A method for manufacturing a semiconductor device includes providing a semiconductor element having electrode terminals; forming a resist on the semiconductor element, the resist having a first surface facing the electrode terminals and a second surface opposite to the first surface; forming an opening in the resist, which covers the electrode terminals by inserting protrusions of a mold into the resist above the electrode terminals; curing the resist by applying energy to the resist; and widening the opening in a radial direction of the opening. The resist is cured in a state where the second surface of the resist faces an inner surface of the mold with a gap between the second surface of the resist and the inner surface of the mold.

A semiconductor device and a method of forming the same are provided. The semiconductor device includes an integrated circuit die, a dielectric layer, an under-bump metallurgy layer, an interconnection die, and a solder material. The integrated circuit die includes a first die connector. The dielectric layer is located on the integrated circuit die. The under-bump metallurgy layer has a line portion on the dielectric layer and a via portion extending through the dielectric layer to contact the first die connector. The interconnection die includes a second die connector. The solder material is located between the line portion of the under-bump metallurgy layer and the second die connector. The under-bump metallurgy layer includes a first copper layer having a uniform grain orientation, wherein the top surface of the first copper layer is in direct contact with the solder material.

A semiconductor package includes a first semiconductor chip having a dummy region, a connection region, and a lower conductive structure disposed below the connection region; bump structures including a first bump structure on the lower conductive structure and a second bump structure below the dummy region; an interposer having the first semiconductor chip mounted thereon and upper conductive structures disposed in an upper portion thereof; connection bumps disposed on upper portions of the upper conductive structures: including a first connection bump in contact with the first bump structure and a second connection bump in contact with the second bump structure; and at least one second semiconductor chip mounted on the interposer adjacent to the first semiconductor chip. The second bump structure includes a portion with a tapering width toward the second connection bump, an end of the second bump structure is inserted into the second connection bump.

A three-dimensional fan-out integrated package structure, a packaging method thereof, and a wireless headset are disclosed. The three-dimensional fan-out integrated package structure includes a first rewiring layer, a second rewiring layer, a metal connection pillar, a first semiconductor chip, a second semiconductor chip, a first filler layer, a first encapsulating layer, a functional chip, a second filler layer, a second encapsulating layer, and metal bumps. By stacking two semiconductor chips, the structure can effectively reduce the packaging area and realize device packaging with high density and high integration, while enabling the minimum line width/line spacing to be reduced to 1.5 m/1.5 m. In addition, the three-dimensional fan-out integrated package structure can simultaneously integrate various functional chips and components such as GPU/PMU/DDR/mm-wave antenna/capacitor/inductor/transistor/flash memory/filter to realize system-level packaging, which not only can reduce cost but also improve the effectiveness of the package structure by using physical isolation to reduce device interference.

A semiconductor package and a method for manufacturing a semiconductor package includes a base substrate including a first surface and a second surface, a first contact pad disposed on the first surface of the base substrate, a first solder resist layer disposed on the first surface of the base substrate, a second solder resist layer covering a portion of an upper surface of the first solder resist layer, and a first connector disposed in the first opening area and the second opening area. The first solder resist layer covers a side surface and a portion of an upper surface of the first contact pad, and defines a first opening area on the first contact pad. The first connector is in contact with the first contact pad. A first width of the first opening area is smaller than a second width of the second opening area.

In some embodiments, an interconnection structure can electrically and physically couple a first semiconductor die and a second semiconductor die. The interconnection structure can include a first portion at the first semiconductor die and a second portion at the second semiconductor die. The first portion can include a first conductive pillar with a concave bonding surface, a first annular barrier layer, and a first annular solder layer. The first annular barrier layer can surround a sidewall of the first conductive pillar, and the first annular solder layer can surround the first barrier layer. The second portion can include a second conductive pillar having a convex bonding surface, the convex bonding surface coupled to the concave bonding surface. The second interconnection structure can further include a second annular solder layer surrounding a second annular barrier layer surrounding the second conductive pillar.

A semiconductor device includes a substrate having a front surface and a rear surface. The device includes a first transistor disposed on the front surface of the substrate and including a first gate electrode and first source/drain patterns disposed adjacent to the first gate electrode. The device includes a front surface dummy stack structure disposed on the first transistor and electrically floated, the front surface dummy stack structure extending from a lower end to an upper end, the lower end being spaced apart from the first transistor. The front surface dummy stack structure includes alternately stacked front surface dummy vias front surface dummy wires that overlap the first gate electrode such that heat generated in the first transistor is transferred to the upper end of the front surface dummy stack structure through the plurality of front surface dummy vias and the plurality of front surface dummy wires.