A substrate, a first layer disposed on the substrate, and a second layer disposed on the first layer are provided. An opening is etched through the second layer to the first layer. A first portion of the first layer is etched through the opening using a first etchant, to expose a surface of the substrate through the opening. A feature is deposited on the surface of the substrate through the opening. A second portion of the first layer is etched using a gaseous etchant, to release the substrate from the second layer.

A substrate processing method includes: forming a photosensitive film on a surface of a substrate; accommodating the substrate with the formed photosensitive film in a first chamber and exposing the photosensitive film to exposure light in the first chamber; accommodating the substrate with the formed photosensitive film in a second chamber different from the first chamber and performing a pressure reduction process to reduce pressure inside the second chamber to a subatmospheric pressure; subjecting, after the pressure reduction process, the photosensitive film to a moisture-containing gas; and developing the photosensitive film of the substrate after exposing and subjecting.