H10W70/464

Circuit module

A circuit module includes a substrate module including an upper main surface with a normal line extending in a vertical direction, an electronic component on the substrate module, and a bonding adhesive fixing the electronic component to the upper main surface. The electronic component includes a first electrode. The substrate module includes a second electrode on the right of the bonding adhesive. The first electrode is electrically connected to the second electrode through solder. A first recess recessed downward and including a bottom is in the upper main surface. An upper end of the second electrode is above the bottom. The first recess includes a first area on the left of a first electrode and overlapping the second electrode when viewed in the lateral direction. A material of the first recess is identical to a material of the upper main surface.

Clip for a discrete power semiconductor package

A discrete power semiconductor package includes a semiconductor chip, a heatsink, a first lead, a second lead, and a clip. The heatsink is adjacent the semiconductor chip and draws heat away from the semiconductor chip. The clip binds the semiconductor chip to the heatsink and includes a chip linker, a first terminal, and a second terminal. The chip linker is atop the semiconductor chip. The first terminal connects to the first lead and the second terminal connects to the second lead.

Molded package having an electrically conductive clip with a convex curved surface attached to a semiconductor die

A molded package includes: a semiconductor die; a substrate attached to a bottom side of the semiconductor die; an electrically conductive clip attached to a top side of the semiconductor die; and a mold compound encapsulating the semiconductor die. A top side of the electrically conductive clip faces away from the semiconductor die and has an exposed flat surface that overlays the semiconductor die and is not covered by the mold compound. A bottom side of the electrically conductive clip faces the semiconductor die and has a convex curved surface that is attached to the top side of the semiconductor die. Along a vertical cross-section of the electrically conductive clip from the exposed flat surface to the convex curved surface, the electrically conductive clip has a plano-convex shape delimited by the exposed flat surface and the convex curved surface. A method of producing the molded package is also described.

SEMICONDUCTOR DEVICES, LEADFRAMES, SYSTEMS AND ASSOCIATED MANUFACTURING METHODS

A semiconductor device and method is disclosed. In one example, the semiconductor device includes a first diepad including a first mounting surface and a first elevated portion elevated with respect to the first mounting surface. A first semiconductor chip is mounted on the first mounting surface. The semiconductor device further includes a second diepad including a second mounting surface. A second semiconductor chip is mounted on the second mounting surface and includes an electrical contact arranged on a top surface of the second semiconductor chip facing away from the second mounting surface. The semiconductor device further includes a first electrical connection element electrically connecting the electrical contact of the second semiconductor chip and the first elevated portion of the first diepad.

Semiconductor device including a lead connector having a plurality of protruding portions

A device includes a first conductive-member which connects to a first electrode on a first face of a chip. A second conductive-member is spaced from the chip and the first conductive-member. A third conductive-member is spaced from the first and second conductive-members. A first connector connects between the second electrode and the second conductive-member. A second connector is opposed to a third electrode on the second face and connects the third electrode and the third conductive-member. A first connecting-member connects the first connector and the second face. A second connecting-member connects the first connector and the second conductive-member. The first connector includes first protruded portions protruded in a first direction from the first conductive-member to the second conductive-member. The second connecting-member is provided to correspond to each of places between the first protruded portions and the second conductive-member.

SEMICONDUCTOR PACKAGE INCLUDING A MOLDED INTERCONNECT
20260040964 · 2026-02-05 ·

A semiconductor package contains a first semiconductor die, electrically coupled to a plurality of leads around a perimeter of the semiconductor package via a molded interconnect. The molded interconnect comprises a plurality of embedded interconnects in a first mold compound which electrically couple the plurality of bond pads of the first semiconductor die to the plurality of leads of the semiconductor package. The molded interconnect may have a greater cross-sectional area at a given pitch compared to a similar wire bonded semiconductor package and allow advantageous thermal management of the semiconductor package compared to other electrical coupling techniques. The molded interconnect may allow small high-power integrated circuits to be packaged with a package footprint which is smaller than would otherwise be available.

Semiconductor package having reduced parasitic inductance

A semiconductor package includes a lead frame, a low side field-effect transistor (FET), a high side FET, a metal clip, and a molding encapsulation. The low side FET is flipped and is attached to a first die paddle of the lead frame. The lead frame comprises one or more voltage input (Vin) leads; a gate lead; one or more switching node (Lx) leads; a first die paddle; a second die paddle; and an end paddle. Each of an exposed bottom surface of the one or more Lx leads is directly connected to an exposed bottom surface of the end paddle. A longitudinal direction of an exposed bottom surface of the gate lead is perpendicular to a longitudinal direction of each of the exposed bottom surface of the one or more Lx leads. An entirely of each of the one or more Vin leads is of the full thickness.

Semiconductor Package

A semiconductor package, a method of manufacturing thereof, and a lead frame are provided, the package includes the lead frame and a die pad and a bond clip. The lead frame exhibits a longitudinal and a transverse dimension perpendicular to the longitudinal dimension. The package includes a die having a first die side mounted to the die pad mounting portion and a second die side opposite to the first, and a bond clip exhibiting a first and second longitudinal dimension perpendicular to the first longitudinal dimension. The bond clip has a first clip mounted to the bond clip of the lead frame using solder and a second clip mounted to the second die side of the die, the bond clip of the lead frame has features to prevent displacement of the bond clip in both the longitudinal and transverse dimension, and to confine the solder on the bond clip.