A method of manufacturing a semiconductor device is provided. The method includes: providing a two-dimensional material layer on a substrate; and supplying an etchant to the two-dimensional material layer to remove a residue from the two-dimensional material layer. The supplying the etchant to the two-dimensional material layer includes: supplying a first process gas to a chamber in which the substrate is provided; supplying microwaves to the chamber to form a first plasma in the chamber; and supplying a second process gas, including a different material from the first process gas, to the chamber to form a second plasma including the etchant.

Indium gallium zinc oxide can be etched by providing a wafer having a layer of indium gallium zinc oxide to a processing chamber, heating the wafer to a first temperature, flowing a first chemical species comprising a fluoride to create a layer of indium gallium zinc oxyfluoride, and removing the layer of indium gallium zinc oxyfluoride by flowing a second chemical species comprising an alkyl aluminum halide, an aluminum alkalide, an organoaluminium compound, a diketone, silicon halide, silane, halogenated silane, or alkyl silicon halide.

Indium gallium zinc oxide can be etched by providing a wafer having a layer of indium gallium zinc oxide to a processing chamber, heating the wafer to a first temperature, flowing a first chemical species comprising a fluoride to create a layer of indium gallium zinc oxyfluoride, and removing the layer of indium gallium zinc oxyfluoride by flowing a second chemical species comprising an alkyl aluminum halide, an aluminum alkalide, an organoaluminium compound, a diketone, silicon halide, silane, halogenated silane, or alkyl silicon halide.