A method for transferring a semiconductor layer from a donor substrate having a weakening plane to a receiver substrate having comprising a bonding face that has open cavities includes putting the donor substrate and the bonding face of the receiver substrate in contact, producing an assembly wherein the cavities are buried, and separating the assembly by fracture along the weakening plane. The bonding face of the receiver substrate includes, apart from the open cavities, a bonding surface that comes into contact with the donor substrate when the assembly is produced. The bonding surface includes a region devoid of cavities one dimension of which is at least 100 m and which has a surface area of at least 1 mm.sup.2, and an intercavity space that occupies from 15 to 50% of the bonding face of the receiver substrate.

A method of preparing a device coupon for a micro-transfer printing process from a multi-layered stack located on a device wafer substrate. The multi-layered stack comprises a plurality of semiconductor layers. The method comprises steps of: (a) etching the multi-layered stack to form a multi-layered device coupon, including an optical component; and (b) etching a semiconductor layer of the multi-layered device coupon to form one or more tethers, said tethers securing the multi-layered device coupon to one or more supports.

The present disclosure relates to a semiconductor device and a manufacturing method thereof; wherein the semiconductor device comprises a semiconductor device layer including one or more semiconductor devices; a first electrode interconnection layer disposed on a first side of the semiconductor device layer; one or more first metal pillars disposed on the first side of the semiconductor device layer and electrically connected to the first electrode interconnection layer; a first insulating material disposed around the one or more first metal pillars, wherein the first insulating material is an injection molding material; and a second electrode interconnection layer disposed on a second side opposite to the first side of the semiconductor device layer. In the technical scheme of the present disclosure, the temporary substrate is not required to achieve better support strength and complete the related processes of the semiconductor manufacturing process, which is convenient, convenient and low in cost.

A method includes forming a semiconductor layer on a donor substrate, the semiconductor layer comprising a semiconductor material, forming an array of cavities in the semiconductor layer, bonding a transistor substrate to the semiconductor layer, wherein the transistor substrate encloses the array of cavities to form an array of enclosed voids, performing a separation process to separate (a) the transistor substrate and a first portion of the semiconductor layer including the array of enclosed voids from (b) the donor substrate and a second portion of the semiconductor layer, and using the transistor substrate and the first portion of the semiconductor layer to form a high-electron-mobility transistor (HEMT) device with a two-dimensional electron gas (2DEG) channel region over the array of enclosed voids.

A semiconductor device according to some embodiments includes: a transfer substrate, a semiconductor layer, and an adhesive layer between the transfer substrate and the semiconductor layer. The adhesive layer includes a lower portion and first and second protrusions, and the semiconductor layer comprises an upper portion and first and second protrusions. The first and second protrusions of the adhesive layer are in contact with the upper portion of the semiconductor layer, the first and second protrusions of the semiconductor layer are in contact with the lower portion of the adhesive layer, the first protrusion of the adhesive layer is disposed between the first and second protrusions of the semiconductor layer, and the second protrusion of the semiconductor layer is disposed between the first and second protrusions of the semiconductor layer.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

A method of manufacturing a semiconductor device is described. The method includes providing a parent substrate including a substrate portion of a first conductivity type. The method further includes forming an absorption layer in the parent substrate by an ion implantation process of an element through a first surface of the parent substrate. The method further includes forming a semiconductor layer structure on the first surface of the parent substrate. The method further includes splitting the parent substrate along a splitting section through a detachment layer. The detachment layer is arranged between the absorption layer and a second surface of the parent substrate at a vertical distance to the absorption layer.

A method for forming a device coupon (100) includes providing a source wafer (1) with a source substrate (10); a sacrificial layer (11); and a film (12). At least one device coupon (100) is formed in the film (12). One or more designed breakable tethers is designed to secure the device coupon (100) to the film (12). The method includes etching one or more recesses (111) extending through the device coupon (100), thereby exposing the sacrificial layer (11); and etching the sacrificial layer (11) away at least partially through one or more of the recesses (111), thereby forming one or more sacrificial recesses (121) in the sacrificial layer (11). At least some pairs of recesses (111) and sacrificial recesses (121) are filled with a support material (200), thereby forming support structures (220) for device coupon (100).

A method of manufacturing an integrated circuit device includes forming a plurality of nanosheet stacked structures on a substrate; forming a gate cut hole; forming a gate cut structure filling the gate cut hole; sequentially forming a substrate insulating layer and a lower wiring structure on the gate cut structure, a plurality of gate spacers, and a lower surface of a plurality of fin-type active areas; and forming an upper wiring structure on an interlayer insulating layer.

A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain region, a second source/drain region adjacent the first source/drain region, an interlayer dielectric layer disposed between the first source/drain region and the second source/drain region, and a conductive feature disposed in the interlayer dielectric layer between the first source/drain region and the second source/drain region. The conductive feature includes a first portion and a second portion extending from the first portion, and an angle is formed between the first portion and the second portion. The angle is less than about 180 degrees. The conductive feature is electrically connected to the first source/drain region.