Packaging of microfabricated devices, such as integrated circuits, microelectromechanical systems (MEMS), or sensor devices is described. The packaging is 3D heterogeneous packaging in at least some embodiments. The 3D heterogeneous packaging includes an interposer. The interposer includes stress relief platforms. Thus, stresses originating in the packaging do not propagate to the packaged device. A stress isolation platform is an example of a stress relief feature. A stress isolation platform includes a portion of an interposer coupled to the remainder of the interposer via stress isolation suspensions. Stress isolation suspensions can be formed by etching trenches through the interposer.

An interconnect substrate includes an insulating layer, a dispersion layer, and an interconnect layer, the insulating layer, the dispersion layer, and the interconnect layer being laminated together, wherein the dispersion layer includes a main material and one or more fillers dispersed in the main material, the one or more fillers forming a unique dispersion pattern, and wherein the unique dispersion pattern is identifiable by image recognition from outside of the interconnect substrate.

An example chip packaging structure includes a redistribution layer, and the redistribution layer includes a first copper pillar layer, a second copper pillar layer, and a metal routing layer. The first copper pillar layer includes a plurality of first copper pillars, and the second copper pillar layer includes a plurality of second copper pillars. The metal routing layer is located between the first copper pillar layer and the second copper pillar layer, and the metal routing layer is electrically connected to the plurality of first copper pillars and the plurality of second copper pillars. The plurality of first copper pillars are coplanar on a first side close to the metal routing layer, and the plurality of second copper pillars are coplanar on a second side away from the metal routing layer.

Various aspects of this disclosure provide a semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device comprising a stacked die structure and a method of manufacturing thereof.

The disclosure provides a through-silicon via (TSV) interposer, a method for manufacturing therefor and a three-dimensional chip. The TSV interposer includes: a substrate, and an interior of the substrate is provided with a cavity and a first structural layer covering a part of an inner wall of the cavity, and a material type of the first structural layer is different from a material type of the substrate; a via hole structure that penetrates the substrate and is located at a side of the cavity; and liquid metal located in the cavity, and the liquid metal and the first structural layer include a same material element.

A circuit board according to an embodiment includes a first insulating layer; a second insulating layer disposed on the first insulating layer; a third insulating layer disposed on the second insulating layer; a fourth insulating layer embedded in the third insulating layer; and a fifth insulating layer disposed on the third insulating layer, wherein the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer are provided with different materials, wherein the second insulating layer and the fifth insulating layer are provided with a same material, and a thickness in a vertical direction between an upper surface of the fourth insulating layer and an upper surface of the third insulating layer is smaller than a thickness of the second insulating layer in the vertical direction.

A circuit board according to an embodiment includes a first insulating layer; a second insulating layer disposed on the first insulating layer; a third insulating layer disposed on the second insulating layer; a fourth insulating layer embedded in the third insulating layer; and a fifth insulating layer disposed on the third insulating layer, wherein the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer are provided with different materials, wherein the second insulating layer and the fifth insulating layer are provided with a same material, and a thickness in a vertical direction between an upper surface of the fourth insulating layer and an upper surface of the third insulating layer is smaller than a thickness of the second insulating layer in the vertical direction.

Disclosed are an LED light and a heat dissipation device thereof. The LED light comprises at least one LED light bead disposed on the heat dissipation device. The heat dissipation device comprises a circuit board having a first metal layer and a second metal layer located on two opposite sides respectively; and a heat sink. The LED light bead is welded to the first metal layer. The second metal layer is welded to the heat sink. The circuit board has heat conductive holes, so that a heat energy generated by the LED light bead can be transferred to the heat sink through the heat conductive holes. Some of the heat conductive holes can be optionally filled with heat conductive material columns, so that the heat energy generated by LED light bead can be conducted to the heat sink through the heat conductive material columns in the heat conductive holes.

An electronic device including a first aluminum nitride film configured to cover a first surface of the first glass substrate, a second aluminum nitride film configured to cover a second surface of the first glass substrate, wiring layers disposed on the first aluminum nitride film, a plurality of first terminals disposed on the wiring layers, a first electronic component mounted on the plurality of first terminals, a plurality of second terminals disposed on the second aluminum nitride film, a second electronic component mounted on the plurality of second terminals, and a first through-hole wiring penetrating the first aluminum nitride film, the second aluminum nitride film, and the first glass substrate are included. A first reference potential terminal among the plurality of first terminals and a second reference potential terminal among the plurality of second terminals are electrically connected to each other via the first through-hole wiring.

A method for fabricating an interposer structure includes: providing a substrate; forming a first opening and filling a first conductive layer in the first opening; forming a first dielectric layer on a first surface of the substrate and forming a first redistribution metal layer in the first dielectric layer; forming a second opening and filling a second conductive layer in the second opening; forming a second dielectric layer on a second surface of the substrate and forming a second redistribution metal layer in the second dielectric layer. Through the redistribution metal layer for wiring is formed on both sides of the substrate in the thickness direction, the high-intensity interconnection requirements can be satisfied. The first opening and the second opening are formed from both sides of the substrate in the thickness direction, respectively, and communicate with each other to make up a TSV hole.