Methods and apparatus for forming an integrated circuit device, including performing a spin-cleaning step at a first rotational speed on a semiconductor substrate supporting the integrated circuit device at an intermediate stage of manufacturing. A rinse fluid is then dispensed over a top surface of the substrate. A rotational speed of the substrate is increased with a constant acceleration no greater than 125 revolutions per minute per second (rpm/s) from the first rotational speed to a second rotational speed. The second rotational speed is maintained for a rinse fluid extraction period. The rotational speed is then reduced to zero.

There is provided a substrate processing apparatus in which throughput is improved by increasing the number of disposed single wafer type chambers while suppressing the size of the apparatus. According to the present invention, the single wafer type chambers can be stacked in a vertical direction, it is possible to provide a substrate processing apparatus in which more single wafer type chambers are mounted even in the same floor area as that of a conventional apparatus. Further, when a mechanism for carrying a substrate W into a single wafer type chamber (drying chamber) and a mechanism for carrying the substrate W out of the drying chamber are provided independently, the substrate can be smoothly transferred around the drying chamber. According to the present invention, it is possible to provide a substrate processing apparatus 1 having a small size and a high throughput.

A device is for drying disc-shaped substrates. The device has an elongated body, which tapers upwards to form a wedge having an angle between two upper surfaces and an upper edge. The upper edge is configured to support a disc-shaped substrate. An upper surface of the two upper surfaces has a groove having an increasing groove depth with increasing distance from the upper edge.

A technique includes (a) preparing a substrate including a first region, which forms an outer surface of a recess and is adjacent to an opening of the recess and whose surface is terminated by a first termination, and a second region, which forms an inner surface of the recess and whose surface is terminated by the first termination; and (b) removing the first termination in the first region by exposing the substrate to a first processing solution containing a liquid that reacts with the first termination, so that a density of the first termination in the first region is smaller than a density of the first termination in the second region.

A substrate processing apparatus includes a container executing a drying process including a raising process for raising a pressure in the container, on a substrate housed therein; a pressure detecting unit detecting a pressure of process fluid in the container; a temperature detecting unit detecting a temperature of the process fluid in the container; and a controller including: a first unit calculating a density of the process fluid based on a first pressure and a first temperature detected in the raising process executed without drying liquid; a second unit that calculates a density of the process fluid based on a second pressure and a second temperature detected in the raising process executed with the drying liquid; a difference calculating unit calculating difference between the first and second densities; and a determining unit determining, based on the difference, appropriateness of a state of the liquid film.

A substrate trimming apparatus includes a support configured to support a bonding substrate including at least two substrates bonded to each other, a waterjet cutting unit arranged to face an upper surface of the support and configured to trim an edge area of the bonding substrate by discharging pressurized fluid, and a camera unit configured to sense the trimmed edge area of the bonding substrate, in which the waterjet cutting unit includes a water body through which ultrapure water passes, a mixing tube coupled to a lower portion of the water body, and an abrasive supplying unit configured to supply an abrasive, and the waterjet cutting unit is configured to discharge at least one of the ultrapure water or a mixture of the ultrapure water and the abrasive towards the edge area of the bonding substrate.

A substrate processing apparatus configured to dry a substrate by replacing a liquid film formed on a top surface of the substrate with a supercritical fluid includes a pressure vessel having therein a drying chamber in which the substrate is dried; a cover body configured to close an opening of the drying chamber; a lock key configured to restrict the cover body from moving from a closing position where the cover body closes the opening toward an opening position where the cover body opens the opening; and a cleaning device configured to clean the lock key.

Provided is a substrate processing apparatus including an index module including a load port in which a substrate is accommodated, a first transfer module and a second transfer module for loading and unloading the substrate, and a processing module that is connected to the index module and includes a plurality of process chambers that process the substrate, wherein one of the plurality of process chambers includes a light processing chamber configured to irradiate light to a photoresist pattern of the substrate, the first transfer module transfers the substrate between the index module and the processing module, the second transfer module transfers the substrate between the plurality of process chambers in the processing module, the first transfer module includes a first hand unit and a second hand unit, and the second transfer module includes a third hand unit and a fourth hand unit.

A substrate processing apparatus with a support part that has a substrate-facing surface and supports the substrate in a state of being spaced from the substrate-facing surface. The support part is accommodated into a processing space of a processing chamber. A processing fluid flows in a certain direction in the processing space. In a path for a laminar flow of the processing fluid between the substrate and the support part, a downstream path positioned on a downstream side in the certain direction is wider than an upstream path positioned on an upstream side in the certain direction to reduce the pressure loss of the processing fluid flowing from the upstream path to the downstream path to prevent re-adhesion of the liquid to the substrate.

A substrate processing apparatus is disclosed. The substrate processing apparatus includes a chamber having a processing space in which substrate processing is performed therein, one or more exhaust lines connected to the chamber and configured to discharge a processing fluid from the processing space to an outside of the chamber, a supporting chuck disposed in the processing space, configured to support the substrate from below so that the substrate is disposed on an upper portion of the supporting chuck, and having an inner space configured to accommodate a first processing fluid, and one or more first supply lines configured to receive the first processing fluid from the outside of the chamber and transfer the first processing fluid to the inner space of the supporting chuck. In addition, various embodiments may be possible.