A stacked semiconductor apparatus, which is formed by stacking a first die and a second die, includes the first die including a first test module configured to generate a test pattern and a plurality of transmission multiplexers, each of which one input receives the test pattern, the second die including a plurality of reception multiplexers and a second test module configured to control the plurality of reception multiplexers, and a connection part including a plurality of signal transmission members electrically connected to outputs of the plurality of transmission multiplexers and each connected to one input of the reception multiplexers, and a robust transmission member configured to transmit a signal between the first test module and the second test module, wherein the second test module transmits a signal, which is received by the reception multiplexer through the signal transmission member, to the first test module through the robust transmission member, and the first test module detects a fault of the signal transmission member by comparing the test pattern with the signal transmitted by the second test module through the robust transmission member.

A bonded structure is disclosed. The bonded structure can comprise a first semiconductor element having a first contact pad. An interposer can include a second contact pad on a first side of the interposer and a third contact pad and a fourth contact pad on a second side of the interposer opposite the first side, the second contact pad bonded to the first contact pad; a second semiconductor element having a fifth contact pad bonded to the third contact pad and a sixth contact pad bonded to the fourth contact pad. A switching circuitry can be configured to switch between a first electrical connection between the second and third contact pads and a second electrical connection between the second and fourth contact pads.

A semiconductor system, a semiconductor device, a through-silicon via (TSV) test method, and a method of manufacturing a semiconductor device are provided. The semiconductor system includes a semiconductor device including a buffer die and first to L-th (where L is an integer greater than or equal to 2) stack dies stacked on the buffer die and communicating with the buffer die through N (where N is a positive integer) TSVs; and a TSV test device that measures each of voltages at one end and voltages at another end on the N TSVs according to a clock signal, compares each of the voltages at the one end and the voltages at the other end with a reference voltage, and determines whether each of the N TSVs has a plurality of TSV defect types according to comparison results.