Disclosed embodiments provide light-emitting diodes (LEDs) and interconnect structures that employ particularly shaped electrodes and a conductive metal-based adhesive that are selected to provide a flexible, robust interconnect that is capable of resisting lateral shear forces, while maintaining a low bond process temperature that is process compatible with other LED component materials. In a non-limiting aspect, disclosed embodiments employ a barrier coating on the interconnect or bonding materials comprising a conductive metal-based adhesive to inhibit moisture and air contact with the conductive metal-based adhesive, thereby preventing or mitigating migration of metal ions in the conductive metal-based adhesive in operation.

A chip package comprises an interposer; an FPGA IC chip over the interposer, wherein the FPGA IC chip comprises a programmable logic block configured to perform a logic operation on its inputs, wherein the programmable logic block comprises a look-up table configured to be provided with multiple resulting values of the logic operation on multiple combinations of the inputs of the programmable logic block respectively, wherein the programmable logic block is configured to select, in accordance with one of the combinations of its inputs, one from the resulting values into its output, and multiple non-volatile memory cells configured to save the resulting values respectively; multiple first metal bumps between the interposer and the FPGA IC chip; and an underfill between the interposer and the FPGA IC chip, wherein the underfill encloses the first metal bumps.

Die attach materials are provided. In one example, the die-attach material includes a plurality of core-shell particles. Each core-shell particle includes a core and a shell on the core. The core includes a conducting material. The shell includes a metal nitride.

A method for manufacturing a semiconductor structure includes: forming a device portion and a front interconnect portion on a base substrate; forming a first bonding part on the front interconnect portion opposite to the device portion, the first bonding part including a first bonding layer and heat-dissipating elements formed in the first bonding layer, a thermal resistance of the heat-dissipating elements being smaller than a thermal resistance of the first bonding layer; forming a second bonding part on a carrier substrate; and performing a bonding process to bond the second bonding part to the first bonding part.