A packaging device is provided. The packaging device includes a die disposed over a laminate, the die comprising a first via structure, and an interposer disposed between the die and the laminate. The interposer includes a second via structure. The packaging device also includes a lid disposed over the interposer and covering the die, a first patterned conductive layer disposed between the die and the interposer, and between the lid and the interposer; and a second patterned conductive layer disposed between the laminate and the interposer. The first patterned conductive layer includes a bonding structure electrically and thermally connected to the first via structure and the second via structure.

A semiconductor package may include a substrate including an upper surface including a first upper pad; first semiconductor chips stacked on the substrate; and a first controller structure in contact with a side surface of at least one of the first semiconductor chips. The first controller structure may include a first controller chip, a first insulating film, and a first conductive film. A first surface of the first controller chip may face a first horizontal direction and may include a first contact pad disposed thereon. The first insulating film may expose the first contact pad and may extend along the first surface of the first controller chip to the substrate. The first conductive film may cover the first contact pad of the first controller chip and the first upper pad of the substrate.

A method for manufacturing a semiconductor structure includes: forming a device portion and a front interconnect portion on a base substrate; forming a first bonding part on the front interconnect portion opposite to the device portion, the first bonding part including a first bonding layer and heat-dissipating elements formed in the first bonding layer, a thermal resistance of the heat-dissipating elements being smaller than a thermal resistance of the first bonding layer; forming a second bonding part on a carrier substrate; and performing a bonding process to bond the second bonding part to the first bonding part.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die having a surface; a second die and a third die, the second and third dies having a first surface and an opposing second surface, wherein the first surfaces of the second and third dies are electrically coupled to the surface of the first die; a first material on the surface of the first die and around and between the second and third dies, the first material having a non-planar surface; a layer on the non-planar surface of the first material and the second surfaces of the second and third dies, the layer including a second material having a thermal conductivity equal to or greater than 10 watt per meter-kelvin (W/m-K) and a thickness between 1 micron and 2 microns; and a substrate, on the layer, including a microchannel.

A semiconductor package includes a substrate, a device die, an encapsulating material, a thermal conductive layer, a filling material, and a carrier. The device die is disposed over the substrate. The encapsulating material is disposed over the substrate and laterally encapsulates the device die. The thermal conductive layer conformally covers the device die and the encapsulating material, wherein a profile of the thermal conductive layer comprises a valley portion. The filling material is disposed over the thermal conductive layer and fills the valley portion, wherein a thermal conductivity of the thermal conductive layer is higher than a thermal conductivity of the filling material. The carrier is bonded to the thermal conductive layer and the filling material.

A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate, the first bonding layer including a first bonding sub-layer and a second bonding sub-layer, the first bonding sub-layer including a first metal oxide material in an amorphous state and a plurality of metal nanoparticles, the second bonding sub-layer including a second metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, the second bonding layer including a third metal oxide material in an amorphous state; conducting a surface modification process on the first and second bonding layers; bonding the device and carrier substrates to each other through the first and second bonding layers; and annealing the first and second bonding layers to convert the first, second, and third metal oxide materials from the amorphous state to a crystalline state.

A component-embedded packaging structure is provided, in which a plurality of metal layers are formed on an inactive surface of a semiconductor chip so as to serve as a buffer portion, and the semiconductor chip is disposed on a carrying portion with the buffer portion via an adhesive. Then, the semiconductor chip is encapsulated by an insulating layer, and a build-up circuit structure is formed on the insulating layer and electrically connected to the semiconductor chip. Therefore, the buffer portion can prevent delamination from occurring between the semiconductor chip and the adhesive on the carrying portion if the semiconductor chip has a CTE (Coefficient of Thermal Expansion) less than a CTE of the adhesive.

Provided are an electronic package and an electronic structure. The electronic package includes a carrier, an electronic component disposed on the carrier, a heat dissipation member connected to the electronic component through a thermal interface material, a backside metal layer disposed on the electronic component and connected to the thermal interface material, and a nanowire array metal layer disposed between the thermal interface material and the backside metal layer. Therefore, a displacement of the thermal interface material relative to the backside metal layer is limited by a rough surface of the nanowire array metal layer. As such, a migration of the thermal interface material and a resulting poor bonding between the heat dissipation member and the electronic component, which affect a heat dissipation efficiency of the electronic package, can be prevented.

Provided is a semiconductor device including a substrate, a semiconductor chip on the substrate, and a bonding layer between the substrate and the semiconductor chip, wherein the bonding layer includes a transition metal, a low-melting-point metal having a melting point lower than a melting point of the transition metal, a noble metal, and an alloy thereof, and a percentage of the noble metal in the bonding layer is greater in a central portion of the bonding layer than at peripheral portions of the bonding layer in a first direction of the bonding layer.

A method includes forming a first tacking layer on a first connection partner, arranging a first layer on the first tacking layer, forming a second tacking layer on the first layer, arranging a second connection partner on the second tacking layer, heating the tacking layers and first layer, and pressing the first connection partner towards the second connection partner, with the first layer arranged between the connection partners, such that a permanent mechanical connection is formed between the connection partners. Either the tacking layers each include a second material evenly distributed within a first material, the second material being configured to act as or to release a reducing agent, or the tacking layers each include a mixture of at least a third material and a fourth material, the materials in the mixture chemically reacting with each other under the influence of heat such that a reducing agent is formed.