A semiconductor device includes a substrate, a first electrode and a second electrode. The semiconductor device includes a MOSFET that has the first electrode as a drain electrode and the second electrode as a source electrode. The first electrode has a layer region provided on a first main surface and a first region extending from the first main surface into the substrate in a first direction from the first electrode to the second electrode. A lower surface of the first electrode protrudes in a direction opposite to the first direction.

The present disclosure discloses a method for manufacturing a color Micro LED display chip module, comprising preparing a Micro LED chip on a substrate, grinding and cutting the chip and then flip-bonding same on a driving basal plate, and peeling the substrate from the chip. Through fabricating a quantum dot hole site corresponding to a sub-pixel unit position of a chip on a transparent basal plate and filling a quantum dot light-color converter in the quantum dot hole site and depositing a quantum dot protective layer, a conversion device is fabricated independently on the transparent basal plate. Compared with processing a conversion layer on a substrate layer in the prior art, inverting a full-color quantum dot conversion device and then aligning and bonding same with the integrated monochrome Micro LED module base can improve the fabrication efficiency, eliminate the crosstalk between light and color in full-color Micro LED display.

A semiconductor device, including: a stacked substrate; a semiconductor device element mounted on the stacked substrate via a first bonding layer; a metal base bonded to the stacked substrate via a second bonding layer, the metal base having two ends and a center portion; and a water jacket bonded to the metal base. The first and second bonding layers are identical, or different, in a material and a composition thereof. The metal base has a plurality of heat dissipation fins, lengths of which are in an ascending order from each of the ends to the center portion of the metal base.

A wireless transistor outline (TO) package structure includes a carrying module, a chip and a lead frame both mounted on the carrying module, a sheet-like bonding module mounted on the chip and the lead frame in a flip chip manner, and an encapsulant that covers the above components therein. A connection pad of the chip and a connection segment of the lead frame are coplanar with each other. The sheet-like bonding module includes a ceramic substrate and a plurality of circuit layers that are stacked and formed on the ceramic substrate in a direct plated copper (DPC) manner. Areas of the circuit layers gradually decrease in a direction away from the ceramic substrate, and thicknesses of the circuit layers gradually increase in the same direction. The circuit layer arranged away from the ceramic substrate connects the connection pad and the connection segment for establishing an electrical connection therebetween.

A semiconductor package includes a package substrate, a first semiconductor chip mounted on the package substrate and that includes a first semiconductor substrate that includes through electrodes, and a second semiconductor chip disposed on the first semiconductor chip and that includes a second semiconductor substrate that includes an active surface and an inactive surface. The second semiconductor chip further includes a plurality of isolated heat dissipation fins that extend in a vertical direction from the inactive surface.

Embodiments of this application provide a semiconductor structure, an electronic device, and a manufacture method for a semiconductor structure, and relate to the field of heat dissipation technologies for electronic products. An example semiconductor structure includes a semiconductor device, a bonding layer, a substrate, a conducting via, and a metal layer. The semiconductor device is disposed on an upper surface of the substrate by using the bonding layer. The metal layer is disposed on a lower surface of the substrate. The substrate includes a base plate, a groove formed on the base plate, and a diamond accommodated in the groove. The conducting via penetrates the substrate, the bonding layer, and at least a part of the semiconductor device, and is electrically connected to the metal layer. The groove bypasses the conducting via.

A module and a substrate are provided in the present disclosure. The module includes an array substrate and a flexible circuit board. The array substrate includes a binding region including a first binding region and a second binding region; and in the binding region, the flexible circuit board is bound with the array substrate. In the first binding region, the array substrate includes a first conductive soldering pad; the flexible circuit board includes a second conductive soldering pad; and the first conductive soldering pad is electrically connected to the second conductive soldering pad. In the second binding region, the array substrate includes one or more of first soldering elements; the flexible circuit board includes one or more of second soldering elements; a first soldering element of the one or more of first soldering elements is fixed with a second soldering element of the one or more of second soldering elements.

In order to achieve the above-described objects, according to an aspect of the present disclosure, a display device includes a substrate which includes an active area and a non-active area extending from the active area and including a pad area and is formed of any one of a transparent conducting oxide and an oxide semiconductor; a plurality of inorganic insulating layers disposed on the substrate; a dam member having one end disposed on the pad area and the other end disposed at the outside of the substrate; and a plurality of flexible films which is disposed to cover the dam member and has one end disposed in the pad area. Accordingly, the dam member which covers the pad area is formed to minimize the crack of the plurality of inorganic insulating layers at the edge of the substrate.