A substrate bonding device including: a bonding chamber including (i) a loading region in which a lower substrate is loaded, (ii) a bonding region in which an upper substrate is bonded to the lower substrate, and (iii) an unloading region spaced from the loading region and unloading the lower substrate to which the upper substrate is bonded in an internal space; a plurality lower chucks configured to support the lower substrate, each lower chuck moveable to be sequentially disposed in the loading region, the bonding region, and the unloading region; and an upper chuck configured to support the upper substrate to face the lower substrate in the bonding region.

A substrate processing method includes: transferring, by a first transfer arm, a wafer lot including a plurality of substrates to a processing bath in which the plurality of substrates in the wafer lot are immersed and processed collectively; receiving, by a second transfer arm, the wafer lot from the first transfer arm, and immersing the wafer lot in an immersion bath in which the plurality of substrates in the wafer lot are immersed collectively; and transferring, by a third transfer arm, the plurality of substrates in the wafer lot to a delivery table one by one. The immersion bath is disposed outside a movement range of the first transfer arm such that the first transfer arm is operated independently from the third transfer arm.

The present disclosure relates to a substrate transfer method and apparatus which controls a substrate transfer robot using position information of a substrate, when the substrate is loaded or unloaded in the substrate transfer apparatus including the substrate transfer robot. When an operation of setting a new reference value due to a change in process or hardware after setting the initial reference value for loading or unloading the substrate is requested, the substrate transfer method and apparatus can automatically perform the reference value setting operation. Therefore, the substrate transfer method and apparatus can transfer the substrate such that the substrate is located in the center of the susceptor, even though the reference value of the substrate transfer robot is not manually changed.

A heat treatment apparatus includes a heating unit, a chamber, an exhaust unit, a partition unit and a switching unit. The heating unit supports and heats a substrate on which a film of a processing liquid is formed. The chamber surrounds the substrate supported by the heating unit. The exhaust unit is configured to discharge a gas from an inner space of the chamber through a discharge opening located near the heating unit. The partition unit is configured to partition the inner space of the chamber into a first space where the substrate on the heating unit is exposed and a second space located above the first space. The switching unit is configured to switch between a first state where the gas is discharged by the exhaust unit through the first space and a second state where the gas is discharged by the exhaust unit through the second space.

An atomic layer deposition apparatus comprising a first single substrate process chamber, a second single substrate process chamber, and a transfer mechanism configured to transfer the substrate between the first and the second process chamber. Wherein both the first and second single substrate process chambers are bounded by a bottom part and a top part for accommodating a substantially flat substrate between them.

A substrate process station includes a housing including a transport region and process region. The process station further includes a magnetic levitation assembly disposed in the transport region configured to levitate and propel a substrate carrier. The magnetic levitation assembly includes a first track segment including first rails disposed in the transport region and below the process region, wherein the first rails each include a first plurality of magnets. The process station further includes a pedestal assembly comprising a pedestal disposed within the housing. The pedestal is moveable between a pedestal transfer position and a process position, wherein the pedestal is disposed between the first rails in the pedestal transfer position to receive a substrate from the substrate carrier, and wherein the pedestal is moveable between the first rails to position the received substrate in the process region in the process position.

A substrate transfer module, which provides clean environment to prevent particles from moving to a substrate, and semiconductor manufacturing equipment including the same. The substrate transfer module of the semiconductor manufacturing equipment includes a transfer chamber providing a transfer space of the substrate, having a chamber groove lowered by a predetermined height from a bottom surface to form a gap with respect to the bottom surface, a guide member provided in an inside portion of the transfer chamber, and a substrate transfer robot configured to move along the guide member and to transfer the substrate.

A substrate processing apparatus includes a hydrophobizing part configured to perform a hydrophobizing process of forming a hydrophobic film on a front surface of a substrate through vapor deposition of a hydrophobizing gas, an ultraviolet radiation part configured to radiate ultraviolet rays to a removal area on a rear surface of the substrate so as to remove the hydrophobic film formed in the removal area in the hydrophobizing process, and a resin-film forming part configured to form a fluororesin film in the removal area after the hydrophobic film is removed.

A transfer apparatus includes a first vacuum transfer module; a first transfer robot disposed in the first vacuum transfer module and at least one ring. In addition, a second vacuum transfer module is provided; and a second transfer robot is disposed in the second vacuum transfer module. A tubular connecting module is disposed between the first vacuum transfer module and the second vacuum transfer module. Further, the first vacuum transfer module, the second vacuum transfer module and the tubular connecting module are arranged along a first direction, with the tubular connecting module having a first length in the first direction, and the first length is smaller than the diameter of the wafer. A wafer support is rotatably attached to the tubular connecting module and at least three ring supporting members outwardly extend from the wafer support to support the at least one ring.

A substrate processing method according to an aspect of the present disclosure includes performing a batch processing to process a plurality of substrates at once, performing a single-substrate processing to process the plurality of substrate one by one after the batch processing, identifying a position of a cutout provided on an outer periphery of a substrate subjected to the batch processing, and rotating the substrate such that the identified position of the cutout reaches a first position. The performing the single-substrate processing includes drying the substrate, and the rotating the substrate is performed before the drying the substrate.