A device package includes a first die comprising a semiconductor substrate; an isolation layer on the semiconductor substrate, wherein the isolation layer is a first dielectric material; a first dummy via penetrating through the isolation layer and into the semiconductor substrate; a bonding layer on the isolation layer, wherein the bonding layer is a second dielectric material that has a smaller thermal conductivity than the first dielectric material; a first dummy pad within the bonding layer and on the first dummy via; a dummy die directly bonded to the bonding layer; a second die directly bonded to the bonding layer and to the first dummy pad; and a metal gap-fill material between the dummy die and the second die.

Provided is a curable organopolysiloxane composition containing a thermally conductive material that is uniformly dispersed in the state of fine particles in a matrix comprised of a resin component, where the composition can then be turned into a cured product exhibiting no cracks or voids when the product is cured. The composition contains (A) an organopolysiloxane having at least two silicon atom-bonded alkenyl groups per each molecule, said organopolysiloxane being liquid at 25 C., (B) an organohydrogenpolysiloxane having a silicon atom-bonded hydrogen atom, (C) gallium and/or a gallium alloy having a melting point of 20 to 70 C., (D) a thermally conductive filler having an average particle diameter of 0.1 to 30 m, and (E) a platinum group metal catalyst, wherein the gallium and/or the gallium alloy (C) is in the form of particles dispersed in the organopolysiloxane and exhibits a solidifying point of 40 C. or lower.

A thermal pad and an electronic device are disclosed for effectively dissipate heat of an electronic component. The thermal pad includes a first cover, a second cover, an elastic shell, and liquid metal. The elastic shell is bent and closed into a tubular structure. The first cover and the second cover are respectively mounted at two ends of the tubular structure to form a closed cavity. The closed cavity is configured to accommodate the liquid metal. Filling the liquid metal into the elastic shell implements good heat conduction effect by using high thermal conductivity of the liquid metal, and implements compression on the thermal pad during assembly of the thermal pad by using compressibility of the elastic shell, to reduce a thickness of the thermal pad.

A method includes forming a transistor over a substrate; forming a front-side interconnect structure over the transistor, wherein the front-side interconnect structure comprises a high resistance (HiR) resistor, and the HiR resistor is made of titanium nitride (TiN) or tantalum nitride (TaN); bonding a carrier substrate to the front-side interconnect structure through a metal-containing material; and forming a backside interconnect structure over a backside of the substrate.

A resin-sealed semiconductor device is configured in such a way that a second bonding material has a melting point higher than that of a first bonding material made of a solder-bonding material, in such a way that one of bonding surfaces through which a power module and a cooling device are bonded to each other with the first bonding material is the other surface portion of a copper plate, and the other one of the bonding surfaces is the surface portion, at the power module side, of the cooling device, and in such a way that the surface portion, at the power module side, of the cooling device is formed of copper or metal having solder wettability the same as or higher than solder wettability of copper.

A thermally conductive curable composition is useful as a conductive die attach adhesive. The curable composition exhibits high thermal conductivity in excess of 5 W/m*K while also exhibiting relatively low melt viscosity over a broad temperature profile. The low melt viscosity facilitates good substrate wetting and adhesion properties in semiconductor die attach applications.

A semiconductor device includes a semiconductor element, a substrate, a bonding member and a sealing body sealing the semiconductor element, the substrate and the bonding member. The substrate has front-face and back-face metal bodies on opposite faces of an insulating base member. The front-face metal body is electrically connected to a main electrode of the semiconductor element. The bonding member connects the front-face metal body and the main electrode. The front-face metal body includes a base material and a plating film disposed on faces of the base material. The plating film is disposed at an upper face and a side face of the front-face metal body. The front-face metal body includes a roughened portion at the upper face and the side face, and a non-roughened portion at an area of the upper face excluding the roughened portion and including an arrangement region of the bonding member.

Semiconductor devices and methods are provided which facilitate improved thermal conductivity using a high-kappa dielectric bonding layer. In at least one example, a device is provided that includes a first substrate. A semiconductor device layer is disposed on the first substrate, and the semiconductor device layer includes one or more semiconductor devices. Frontside interconnect structure are disposed on the semiconductor device layer, and a bonding layer is disposed on the frontside interconnect structure. A second substrate is disposed on the bonding layer. The bonding layer has a thermal conductivity greater than 10 W/m-K.

A device including a ceramic substrate having a first side and an opposite second side. A first brazing layer is arranged on the first side in regions and a first copper layer is arranged on the first brazing layer. A second brazing layer is arranged on the second side and a second copper layer is arranged on the second brazing layer. The first copper layer has first trenches which extend from a surface of the first copper layer to the first side. The second copper layer has second trenches which extend from a surface of the second copper layer to at least one surface of the second brazing layer. The second copper layer can be conductively connected to a heat sink. The first trenches have first trench bottoms and the second trenches have second trench bottoms, wherein the first trench bottoms are wider than the second trench bottoms.

A package structure includes a board, an inner metal layer, a metal piece, and a buffering conductor. The inner metal layer is disposed on an inner side of the board and includes a connection region. The metal piece has a first segment being spaced apart from and facing toward the connection region. The first segment and the connection segment have uneven surfaces that are complement in shape with each other and that have a gap there-between. The buffering conductor is arranged in the gap, and connects the first segment and the connection segment to be jointly formed as an expansion joint. The buffering conductor has a coefficient of thermal expansion (CTE) that is less than a CTE of the inner metal layer and that is less than a CTE of the metal piece.