Provided is a method of manufacturing a semiconductor package, the method including: forming a bonding layer on a carrier, forming a redistribution substrate on the bonding layer, mounting a plurality of semiconductor chips on the redistribution substrate, forming a package structure for a plurality of semiconductor packages; bonding an ultraviolet (UV)-curable adhesive sheet to a surface of the package structure opposite the bonding layer and redistribution substrate; separating or removing the carrier and the bonding layer from the package structure; forming an under bump metallurgy (UBM) layer and forming an external connection conductor on the redistribution substrate; cutting the package structure into the plurality of semiconductor packages; irradiating the UV-curable adhesive sheet with UV rays, after cutting the plurality of semiconductor packages; and separating the plurality of semiconductor packages from the UV-curable adhesive sheet.

A microelectronic device is formed to include an embedded die substrate on an interposer; where the embedded die substrate is formed with no more than a single layer of transverse routing traces. In the device, all additional routing may be allocated to the interposer to which the embedded die substrate is attached. The embedded die substrate may be formed with a planarized dielectric formed over an initial metallization layer supporting the embedded die.

The present disclosure provides a semiconductor structure, including: a semiconductor device layer including a first surface and a second surface, wherein the first surface is at a front side of the semiconductor device layer, and the second surface is at a backside of the semiconductor device layer; an insulating layer above the second surface of the semiconductor device; and a through-silicon via (TSV) traversing the insulating layer. Associated manufacturing methods of the same are also provided.

In an embodiment, a package including: a redistribution structure including a first dielectric layer and a first conductive element disposed in the first dielectric layer; a first semiconductor device bonded to the redistribution structure, wherein the first semiconductor device includes a first corner; and an underfill disposed over the redistribution structure and including a first protrusion extending into the first dielectric layer of the redistribution structure, wherein the first protrusion of the underfill overlaps the first corner of the first semiconductor device in a plan view.

Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.

A semiconductor package includes a semiconductor chip on a redistribution substrate and including a body, a chip pad on the body, and a pillar on the chip pad, a connection substrate including base layers and a lower pad on a bottom surface of a lowermost one of the base layers, a first passivation layer between the semiconductor chip and the redistribution substrate, and a dielectric layer between the redistribution substrate and the connection substrate. The first passivation layer and the dielectric layer include different materials from each other. A bottom surface of the pillar, a bottom surface of the first passivation layer, a bottom surface of a molding layer, a bottom surface of the lower pad, and a bottom surface of the dielectric layer are coplanar with each other.

A package structure is provided, which includes a redistribution structure, an interposer substrate disposed over the redistribution structure, a first semiconductor die disposed between the redistribution structure and the interposer substrate, a second semiconductor die partially overlapping the first semiconductor die in a direction perpendicular to a surface of the redistribution structure, and a first protective layer surrounding the first semiconductor die.

A structure including stacked substrates, a first semiconductor die, a second semiconductor die, and an insulating encapsulation is provided. The first semiconductor die is disposed over the stacked substrates. The second semiconductor die is stacked over the first semiconductor die. The insulating encapsulation includes a first encapsulation portion encapsulating the first semiconductor die and a second encapsulation portion encapsulating the second semiconductor die.

A package structure includes a first dielectric layer disposed on a first patterned circuit layer, a first conductive via in the first dielectric layer and electrically connected to the first patterned circuit layer, a circuit layer on the first dielectric layer, a second dielectric layer on the first dielectric layer and covering the circuit layer, a second patterned circuit layer on the second dielectric layer and including conductive features, a chip on the conductive features, and a molding layer disposed on the second dielectric layer and encapsulating the chip. The circuit layer includes a plurality of portions separated from each other and including a first portion and a second portion. The number of pads corresponding to the first portion is different from that of pads corresponding to the second portion. An orthographic projection of each portion overlaps orthographic projections of at least two of the conductive features.

Embodiments include packages and methods for forming packages which include interposers having a substrate made of a dielectric material. The interposers may also include a redistribution structure over the substrate which includes metallization patterns which are stitched together in a patterning process which includes multiple lateral overlapping patterning exposures.