A cooling apparatus for a semiconductor arrangement is made by producing a base body with a flat surface, opposing first and second lateral surfaces, and channels extending continuously from the first to the second lateral surface and parallel to the flat surface, with adjacent ones of the channels being each connected via a web. Bilaterally introduced in the base body are contacting grooves and connecting grooves in parallel relation to the flat surface by partially removing the web between the adjacent channels such that the connecting grooves are arranged between the adjacent channels, the channels are arranged between the flat surface and the contacting grooves, and the connecting grooves protrude deeper into the base body than the respective contacting grooves. The channels are closed to form a closed channel structure which is filled with a heat transfer fluid so that the base body is directly contacting the heat transfer fluid.

In a general aspect, mechanisms for dual coupling of a semiconductor package assembly to a component includes a thermal dissipation appliance; a semiconductor package assembly bonded to the thermal dissipation appliance by a thermally conductive adhesive material; and at least one clamping tool mechanically coupled to the semiconductor package assembly and to the thermal dissipation appliance, the at least one clamping tool exerting a compressive force on the semiconductor package assembly to maintain an interface between the semiconductor package assembly and the thermal dissipation appliance.

In a method for producing a semiconductor module, a heatsink is produced from a first metal material and a cavity with a base surface and a wall portion is introduced in a heatsink surface such as to form an obtuse angle between the base surface and the wall portion. In addition, a depression is introduced into the base surface of the cavity which depression is smaller than the base surface of the cavity. A second metal material is applied in the cavity and the depression using a thermal spraying method to form a heat-spreading layer of different thicknesses, with the second metal material having a thermal conductivity which is higher than a thermal conductivity of the first metal material. A semiconductor arrangement is connected to the heat-spreading layer.

In an embodiment, a package includes an encapsulant laterally surrounding a first integrated circuit device and a second integrated circuit device, wherein the first integrated circuit device includes a die and a heat dissipation structure over the die; a sealant disposed over the heat dissipation structure; an adhesive disposed over the second integrated circuit device; and a lid disposed over the sealant and the adhesive, wherein the lid includes a first cooling passage and a second cooling passage, the first cooling passage including an opening at a bottom of the lid and aligned to the heat dissipation structure, the second cooling passage including channels aligned to the second integrated circuit device and being distant from the bottom of the lid.

Devices and method for forming a chip package assembly, including a package substrate, a fan-out package attached to the package substrate, the fan-out package including a first semiconductor die including a first physical interface and a second semiconductor die including a second physical interface. The chip package assembly further including a heatsink structure including a heatsink base and a cavity within the heatsink base, and a thermoelectric cooler (TEC) embedded within the cavity, wherein the TEC is positioned above the first physical interface and the second physical interface.

A base plate for a power semiconductor module includes a layer of a metallic material; and at least one first area formed in the layer of metallic material in which either the layer of metallic material is locally deformed, or a stress is locally increased in the layer of metallic material, or both such that a deflection or a local stress or both in the at least one first area differs from a deflection or a local stress or both of those areas of the metallic layer surrounding the at least one first area.

A semiconductor package and the method of forming the same are provided. The semiconductor package may include a package substrate and a first package component over the package substrate. The first package component may include a first semiconductor die and a heat dissipation substrate over the first semiconductor die. The heat dissipation substrate may comprise a base portion and a first coating portion on a first surface of the base portion. The first coating portion may be between the first semiconductor die and the base portion. The base portion may comprise a first material with a first thermal conductivity and the first coating portion may comprise a second material different from the first material. The second material may have a second thermal conductivity smaller than the first thermal conductivity.