H10W40/70

Packages with liquid metal as heat-dissipation media and method forming the same

A method includes attaching a permeable plate to a metal lid, with the permeable plate including a metallic material, and dispensing a liquid-metal-comprising media to a first package component. The first package component is over and bonded to a second package component. The liquid-metal-comprising media includes a liquid metal therein. The method further includes attaching the metal lid to the second package component. During the attaching, the liquid-metal-comprising media migrates into the permeable plate to form a composite thermal interface material.

Component system

A component system including at least two components, between which a cavity to be filled is formed, wherein the cavity has a feed section, and a filling device for the filling of the cavity via a feed element, which can be introduced, before the filling procedure into the feed section. The feed element has a closure and sealing element, which is configured to close and seal the feed section in a closure position during the filling procedure. The closure and sealing element is configured as an elastically expandable body, which can change between the closure position and a release position. During an introduction of the feed element into the feed section, the closure and sealing element is in the release position, and can then be transferred into the closure position.

Fan-out type semiconductor package and method of manufacturing the same

A fan-out type semiconductor package is provided and may include: a package substrate; an interposer on an upper surface of the package substrate, the interposer including upper pads and lower pads electrically connected with the upper pads; conductive bumps between the package substrate and the lower pads of the interposer and electrically connecting the package substrate with the interposer; a semiconductor chip on a central portion of an upper surface of the interposer and electrically connected with the upper pads of the interposer; a molding member on an edge portion of the upper surface of the interposer, the molding member including an upper surface coplanar with an upper surface of the semiconductor chip; and a metal pillar structure vertically extending from the upper surface of the molding member to a lower surface of the interposer and configured to individually make contact with the lower pads of the interposer.

Fan-out type semiconductor package and method of manufacturing the same

A fan-out type semiconductor package is provided and may include: a package substrate; an interposer on an upper surface of the package substrate, the interposer including upper pads and lower pads electrically connected with the upper pads; conductive bumps between the package substrate and the lower pads of the interposer and electrically connecting the package substrate with the interposer; a semiconductor chip on a central portion of an upper surface of the interposer and electrically connected with the upper pads of the interposer; a molding member on an edge portion of the upper surface of the interposer, the molding member including an upper surface coplanar with an upper surface of the semiconductor chip; and a metal pillar structure vertically extending from the upper surface of the molding member to a lower surface of the interposer and configured to individually make contact with the lower pads of the interposer.

Chip-scale package architectures containing a die back side metal and a solder thermal interface material

An integrated circuit (IC) package comprising a die having a front side and a back side. A solder thermal interface material (STIM) comprising a first metal is over the backside. The TIM has a thermal conductivity of not less than 40 W/mK; and a die backside material (DBM) comprising a second metal over the STIM, wherein the DBM has a CTE of not less than 1810.sup.6 m/mK, wherein an interface between the STIM and the DBM comprises at least one intermetallic compound (IMC) of the first metal and the second metal.

Semiconductor chip having a high thermal liquid coolant
12628648 · 2026-05-12 · ·

A semiconductor package includes a flip chip die communicatively coupled to a substrate. A lid is also coupled to the substrate and covers the flip chip die. A non-curing thermal conductive liquid coolant fills a volume defined by the lid and is used to dissipate heat that is generated by the flip chip die. The non-curing thermal conductive liquid coolant may include nanometer-sized particles that enhance the heat dissipation properties of the non-curing thermal conductive liquid coolant. The semiconductor package also may include a micro-rotator that causes the non-curing thermal conductive liquid coolant to circulate within the volume when a temperature of the flip chip die exceeds a temperature threshold.

Semiconductor chip having a high thermal liquid coolant
12628648 · 2026-05-12 · ·

A semiconductor package includes a flip chip die communicatively coupled to a substrate. A lid is also coupled to the substrate and covers the flip chip die. A non-curing thermal conductive liquid coolant fills a volume defined by the lid and is used to dissipate heat that is generated by the flip chip die. The non-curing thermal conductive liquid coolant may include nanometer-sized particles that enhance the heat dissipation properties of the non-curing thermal conductive liquid coolant. The semiconductor package also may include a micro-rotator that causes the non-curing thermal conductive liquid coolant to circulate within the volume when a temperature of the flip chip die exceeds a temperature threshold.