The present disclosure provides a method for forming a semiconductor device. A first wafer including a first substrate and a first interconnection layer formed on the first substrate is provided. A second wafer including a second substrate and a second interconnection layer formed on the second substrate is provided. The second wafer is stacked on the first wafer. A thinning process is performed on the second substrate of the second wafer. An edge trimming process is performed to remove portions of the second interconnection layer and the second substrate along a perimeter of the second wafer, wherein the edge trimming process results in the first wafer having a recessed surface. A protective layer, surrounding a sidewall of the thinned and edge-trimmed second wafer, is formed on the recessed surface to form a wafer stack structure.

Embodiments herein provide for an integrated cooling assembly and methods of forming the same. The integrated cooling assembly comprises an interposer, a plurality of semiconductor devices, a first cold plate, and at least one second cold plate. The interposer has a first side and a second side opposite the first side. The plurality of semiconductor devices are attached to the first side of the interposer. A first cold plate is attached to at least one of the plurality of first semiconductor devices. At least one second cold plate is attached to the second side of the interposer.

A method for sequencing a hybrid bonding process by double linking a source of dies and a target. The method may include selecting a source of dies for bonding, selecting a target on which the dies will be bonded, linking the source to the target, linking the target to the source, forming an integrated bonding product sequence that includes a first linked bonding sequence for the source and a second linked bonding sequence for the target, determining bonding process chamber allocations and process timing for the source and the target based on the integrated bonding product sequence, and bonding a die from the source to the target using the integrated bonding product sequence.