The present invention is a susceptor for epitaxial growth on a wafer having a main surface of a (110) plane, the susceptor for epitaxial growth including: a pocket for mounting a wafer; and an outer periphery surrounding the pocket, wherein the outer periphery is provided with a flat portion and a raised portion that is a portion adjacent to the pocket and that has a portion projected from an upper face of the flat portion, and the pocket is designed such that, when the wafer is mounted on the pocket, a height of an upper face of the wafer is positioned above a height of the upper face of the flat portion. This provides a susceptor for epitaxial growth that can produce a highly flat (110) epitaxial wafer by using a wafer (a substrate) having a main surface of (110).

The present invention relates to a bonding apparatus for a power terminal of a heating plate, for bonding the power terminal supplying power to a heating wire of a substrate. The bonding apparatus for a power terminal of a heating plate comprises: a chamber; a stage which is disposed in an inner space of the chamber and on which the substrate is placed; an upper press portion disposed in the inner space of the chamber to face the stage, provided to be vertically movable, and having a terminal fixing portion configured to fix the power terminal; and an elevating driver configured to move the upper press portion up and down, wherein the terminal fixing portion further includes a magnetic holder configured to hold the power terminal by a magnetic force.

A substrate treating apparatus includes: a chill plate; a first support part installed on the chill plate and including a first tip having a first height; and a second support part installed on the chill plate and having a height changed according to a temperature, wherein at a first temperature, a maximum height of the second support part becomes equal to or lower than a height of the first tip, such that the substrate is supported by the first tip of the first support part, and at a second temperature lower than the first temperature, the second support part becomes higher than the first tip, such that the substrate is supported by the second support part.

The present disclosure relates to a substrate transfer device for sensing deflection of an end-effector and a substrate processing apparatus having the same. The substrate transfer device includes: an end-effector extending in a first direction and supporting a substrate; an end-effector hand connected with one side in the first direction of the end-effector; a horizontal movement unit connected with the end-effector hand and moving the end-effector in the first direction; and a deflection sensing unit including a light emitting part and a light receiving part, which are respectively disposed at both sides of a movement path of the end-effector, and sensing deflection of the end-effector.

A substrate transport robot system includes a substrate holding hand to hold a plurality of substrates, a robot arm, and a controller. The controller is configured or programmed to acquire an amount of deviation of placement of each of the plurality of substrates with respect to a predetermined reference position based on a detection result of a detector, and control a transport operation of the robot arm operable to transport the plurality of substrates based on an acquired amount of deviation such that each of the plurality of substrates is loaded separately into a mount and/or unloaded separately from the mount.

There is provided a substrate processing apparatus with improved throughput by reconsidering a configuration of an apparatus including a batch type module and a single wafer type module. In a single wafer processing region according to single wafer processing of a processing block of the present invention, a buffer unit to and from which both a first transfer mechanism and a center robot can hand over and receive a substrate(s) is provided. Therefore, the first transfer mechanism can collectively hand over and receive processed substrates and unprocessed substrates via the buffer unit. Therefore, a potential of the first transfer mechanism is drawn out, and the substrate processing apparatus having a high throughput can be provided.

Disclosed is a ceramic susceptor. The ceramic susceptor may include: an insulating plate in which one or more electrodes are arranged; a hollow shaft with one end connected to the insulating plate; and one or more electrode rods connected to the electrodes. The hollow shaft may include one or more side wall holes penetrating an interior of a side wall, and the one or more electrode rods may include one or more first electrode rods, each of which is electrically connected to a first electrode among the one or more electrodes. The first electrode rods may extend through the side wall holes, respectively.

A substrate processing system includes a substrate processing apparatus configured to process a substrate, a substrate transfer mechanism including a substrate holder configured to hold the substrate, an imaging device provided in the substrate transfer mechanism and configured to image a monitoring target member inside the substrate processing apparatus, and a controller. The controller is configured to cause the imaging device to image multiple portions of the monitoring target member, including a central portion facing a center of the substrate during processing and a peripheral edge portion facing a peripheral edge side of the substrate during the processing, by moving the substrate holder, and calculate, for each of the multiple portions of the monitoring target member, a physical amount indicating a state of the corresponding portion based on an imaging result.

This disclosure pertains to pedestal assemblies for supporting wafers in semiconductor manufacturing tools and chambers. Such pedestal assemblies may have an edge purge system that includes an axially symmetric first plenum volume that includes at 2024/073447 least a first radial sub-volume, a first axial sub-volume, and a second radial sub-volume. The first axial sub-volume may be fluidically interposed between the first radial sub-volume and the second radial sub-volume. An optional second plenum volume may be provided as well and may be used to fluidically connect a region of a wafer support that is part of the pedestal assembly with a vacuum port to allow the wafer support to provide vacuum clamping functionality.

WO

The present invention relates to a substrate raising/lowering module, a substrate processing module including the same, and a substrate processing system. A lifting module includes: a substrate support disposed in an interior space and supporting a substrate; and an upward/downward driving unit coupled to the substrate support to drive upward/downward movement of the substrate support, wherein the upward/downward driving unit includes a shaft coupled to the substrate support and extending outwardly through a chamber, and an anti-rotation member coupled to the shaft to prevent circumferential rotation of the shaft about a longitudinal reference axis of the shaft.