A semiconductor device includes: a drift region of a first conductivity type between first and second surfaces of a semiconductor body; a first region of a second conductivity type at the second surface; and a field stop region of the first conductivity type between the drift region and first region. The field stop region includes first and second sub-regions with hydrogen related donors. A p-n junction separates the first region and first sub-region. A concentration of hydrogen related donors, along a first vertical extent of the first sub-region, steadily increases from the pn-junction to a maximum value, and steadily decreases from the maximum value to a value at a first transition between the sub-regions. A second vertical extent of the second sub-region ends at a second transition to the drift region where the concentration of hydrogen related donors equals 10% of the value at the first transition.

A silicon carbide wafer, including: a semiconductor substrate containing silicon carbide and having a first surface and a second surface opposite to each other; an epitaxial layer provided at the first surface of the semiconductor substrate and having a dopant concentration lower than that a dopant concentration of the semiconductor substrate; and a crystal defect introduced region provided in the semiconductor substrate, at a predetermined depth from the first surface of the semiconductor substrate, the crystal defect introduced region being in contact with the epitaxial layer and containing a number of point defects that are atomic vacancies created by irradiation of an electron beam on the semiconductor substrate.

Provided is a semiconductor device including a MOS gate structure provided in a semiconductor substrate, including: an interlayer dielectric film which includes a contact hole and is provided above the semiconductor substrate; a conductive first barrier metal layer provided on side walls of the interlayer dielectric film in the contact hole; a conductive second barrier metal layer stacked on the first barrier metal layer in the contact hole; and a silicide layer provided on an upper surface of the semiconductor substrate below the contact hole, in which the first barrier metal layer is more dense than the second barrier metal layer, and a film thickness thereof is 1 nm or more and 10 nm or less.

Provided is a semiconductor device provided with an IGBT, comprising: a semiconductor substrate having upper and lower surfaces, throughout which bulk donors are distributed; a hydrogen peak including a local maximum arranged 25 m or more away from the lower surface of the semiconductor substrate in a depth direction, at which a hydrogen chemical concentration shows a local maximum value; an upper tail where the hydrogen chemical concentration decreases in a direction from the local maximum toward the upper surface; and a lower tail where the hydrogen chemical concentration decreases in a direction from the local maximum toward the lower surface more gradually than the upper tail; and a first high concentration region having a donor concentration higher than a bulk donor concentration and including a region extending for 4 m or more in a direction from the local maximum of the hydrogen peak toward the upper surface.

There is provided a diode including an anode electrode provided on a side of a front surface of a semiconductor substrate, an interlayer dielectric film disposed between the semiconductor substrate and the anode electrode, a first anode region of a first conductivity type provided on the front surface of the semiconductor substrate, a second anode region of a second conductivity type, which is different from the first conductivity type, provided on the front surface of the semiconductor substrate, a first contact hole provided in the interlayer dielectric film, causing the anode electrode to be in Schottky contact with the first anode region, and a second contact hole provided in the interlayer dielectric film and different from the first contact hole, causing the anode electrode to be in ohmic contact with the second anode region.