A semiconductor device comprising a terminal, a semiconductor element and a sealing resin. The semiconductor element is disposed on one side of the terminal in a first direction and electrically connected to the terminal. The sealing resin covers the semiconductor element and a part of the terminal. The sealing resin has a bottom surface disposed on an opposite side to the semiconductor element with respect to the terminal in the first direction. The terminal extends beyond the bottom surface.

An example lead-frame package, a method of manufacturing the lead-frame package, and an electrical system comprising the lead-frame package utilizing an integrated insulating layer to electrically insulate an integrated circuit within the lead-frame package from one or more electrical components are provided. The example lead-frame package includes an integrated circuit substrate and an integrated circuit. An integrated insulating layer forms a first surface of the integrated circuit substrate. A plurality of conductive leads provides a conductive path between a second surface of the integrated circuit substrate and the first surface, with a conductive trace formed within the integrated circuit substrate. The integrated insulating layer defines conductive wirebond pads providing an electrical connection to the plurality of conductive leads. In addition, the integrated circuit is electrically isolated from the conductive trace by the integrated insulating layer, wherein the integrated circuit is positioned to determine an electromagnetic property of the conductive trace.

An electronic device includes a non-conductive die attach film on a side of a conductive lead, a semiconductor die having a first side and a lateral side, the first side on the non-conductive die attach film, and the lateral side including striations, and a package structure enclosing the semiconductor die and a portion of the conductive lead. A method includes singulating portions of a non-conductive die attach film on a carrier, attaching a backside of a wafer to the singulated portions of the non-conductive die attach film, and singulating semiconductor dies of the wafer while the backside of the wafer is attached to the singulated portions of the non-conductive die attach film.

A microelectronic device package includes: a package substrate having a first set of leads spaced from a first die pad configured for mounting semiconductor devices, and a second set of leads spaced from a second die pad configured for mounting additional semiconductor devices, the first die pad and the first set of leads spaced from the second die pad and the second set of leads. Semiconductor devices are mounted to the first die pad and second die pad. A ceramic interposer is mounted to the package substrate in thermal contact with at least the first die pad. Mold compound covers the semiconductor devices, a portion of the ceramic interposer, and portions of the first set and the second set of leads.

An electronic device includes a conductive lead, a semiconductor die, a package structure enclosing the semiconductor die and a portion of the conductive lead, and a non-conductive die attach film extending between the conductive lead and the semiconductor die and having a thickness less than 50 m. A method of fabricating an electronic device includes singulating portions of a non-conductive die attach film on a carrier, partially singulating prospective die areas from a front side of a wafer, removing wafer material from a back side of the wafer to separate a semiconductor die from the wafer, and attaching a backside the semiconductor die to a singulated portion of the non-conductive die attach film on the carrier.

A semiconductor device includes a leadframe, a first semiconductor chip arranged above a mounting surface of the leadframe, and a heatsink arranged above a top surface of the first semiconductor chip facing away from the mounting surface of the leadframe. At least one first lead of the leadframe extends towards a bottom surface of the heatsink facing the mounting surface of the leadframe. The at least one first lead is mechanically coupled to the bottom surface of the heatsink.

According to one embodiment, a semiconductor device includes a semiconductor chip, a first conductor which includes a first portion exposed from a first surface of a sealing resin facing to a first direction, a second portion projecting from a second surface of the sealing resin facing to a second direction, and a bent portion connecting the first portion and the second portion, a second conductor exposed from a third surface of the sealing resin opposed to the first surface and having a thickness in the first direction which is greater than a thickness of the first conductor, a third conductor provided between the semiconductor chip and the first conductor, a first bonding material which bonds the semiconductor chip and the second conductor, a second bonding material which bonds the semiconductor chip and the third conductor, and a third bonding material which bonds the third conductor and the first conductor.

According to one embodiment, there is provided a semiconductor device including a chip, and a gate electrode connected to a gate electrode pad provided on the chip. The gate electrode includes an external exposed portion having an external exposed surface that is flush with an external exposed surface of a sealing resin, and a gate electrode pad connection portion continuous with the external exposed portion and connected to the gate electrode pad, the gate electrode pad connection portion including a portion sandwiched between the gate electrode pad and a part of the sealing resin.

Systems and methods plasma dicing are provided. The method includes forming a mask layer on a first surface of a wafer. The mask layer includes scribe lines and the wafer is diced along the scribe lines. The method also includes forming a die attach layer of a photo patternable material on a second surface of the wafer opposite the first surface. The method further includes patterning the die attach layer to form a number of openings in the die attach layer in a predetermined pattern. The method yet further includes applying a dicing tape to the die attach layer. The method includes dicing the wafer along the scribe lines to form dies of a plurality of dies supported by the dicing tape, a die of the plurality of dies having the die attach layer of the photo patternable material.