A method includes forming a metal seed layer over a first conductive feature of a wafer, forming a patterned photo resist on the metal seed layer, forming a second conductive feature in an opening in the patterned photo resist, and heating the wafer to generate a gap between the second conductive feature and the patterned photo resist. A protection layer is plated on the second conductive feature. The method further includes removing the patterned photo resist, and etching the metal seed layer.

A method of forming a semiconductor device includes providing a substrate having a patterned film including manganese; depositing a graphene layer over exposed surfaces of the patterned film; depositing a dielectric layer containing silicon and oxygen over the graphene layer; and heat-treating the substrate to form a manganese-containing diffusion barrier region between the graphene layer and the dielectric layer.

An upper surface of a plug (PL1) is formed so as to be higher than an upper surface of an interlayer insulating film (PIL) by forming the interlayer insulating film (PIL) on a semiconductor substrate (1S), completing a CMP method for forming the plug (PL1) inside the interlayer insulating film (PIL), and then, making the upper surface of the interlayer insulating film (PIL) to recede. In this manner, reliability of connection between the plug (PL1) and a wiring (W1) in a vertical direction can be ensured. Also, the wiring (W1) can be formed so as not to be embedded inside the interlayer insulating film (PIL), or a formed amount by the embedding can be reduced.

Microelectronic deviceshaving at least one conductive contact structure adjacent a silicide regionare formed using methods that avoid unintentional contact expansion and contact reduction. A first metal nitride liner is formed in a contact opening, and an exposed surface of a polysilicon structure is thereafter treated (e.g., cleaned and dried) in preparation for formation of a silicide region. During the pretreatments (e.g., cleaning and drying), neighboring dielectric material is protected by the presence of the metal nitride liner, inhibiting expansion of the contact opening. After forming the silicide region, a second metal nitride liner is formed on the silicide region before a conductive material is formed to fill the contact opening and form a conductive contact structure (e.g., a memory cell contact structure, a peripheral contact structure).

A semiconductor structure includes a semiconductor substrate, a dielectric layer, a via, a first graphene layer, and a metal line. The dielectric layer is over the semiconductor substrate. The via extends through the dielectric layer. The first graphene layer extends along a top surface of the via. The metal line spans the first graphene layer. The metal line has a line width decreasing as a distance from the first graphene layer increases.