A method of fabricating semiconductor fins, including, patterning a film stack to produce one or more sacrificial mandrels having sidewalls, exposing the sidewall on one side of the one or more sacrificial mandrels to an ion beam to make the exposed sidewall more susceptible to oxidation, oxidizing the opposite sidewalls of the one or more sacrificial mandrels to form a plurality of oxide pillars, removing the one or more sacrificial mandrels, forming spacers on opposite sides of each of the plurality of oxide pillars to produce a spacer pattern, removing the plurality of oxide pillars, and transferring the spacer pattern to the substrate to produce a plurality of fins.

The present application discloses a semiconductor device including a first isolation structure, a second isolation structure, and a third isolation structure disposed in a semiconductor substrate. The semiconductor device further includes a transistor and a resistor. The transistor is disposed between the first isolation structure and the second isolation structure, and includes a gate electrode and a first source/drain (S/D) region. The resistor is disposed between the second isolation structure and the third isolation structure, and includes a resistor electrode. The first S/D region is disposed between the gate electrode and the second isolation structure, and is electrically connected to the resistor electrode.

The present application relates to a semiconductor fin structure cut process. The process includes: providing a semiconductor substrate and forming a plurality of fin structures on the semiconductor substrate, a gap being formed between every two adjacent fin structures; depositing a first dielectric layer, the first dielectric layer being filled in the gaps so that all fin structures are connected into a whole to form a semiconductor with fins; forming a plurality of pattern layer strips on the semiconductor with fins, a groove being formed between every two adjacent pattern layer strips, the fin structures closest to each pattern layer strip in the semiconductor with fins being necessary fin structures, attaching mask strips onto side surfaces of each pattern layer strip, the mask strips covering the necessary fin structures; etching the semiconductor with fins so that the unnecessary fin structures not covered by the mask strips are truncated.

A method for forming fins includes forming a three-color hardmask fin pattern on a fin base layer. The three-color hardmask fin pattern includes hardmask fins of three mutually selectively etchable compositions. Some of the fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color and that leaves at least one fin of the first color behind. The fins of the second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.