Provided is an apparatus for treating a substrate. The substrate treating apparatus may include: a substrate support unit supporting a substrate; a nozzle supplying a liquid to the substrate supported on the substrate support unit; a home port in which the nozzle waits; and an electrostatic measurement member measuring an electrostatic amount of a liquid dispensed from the nozzle in the home port.

A film forming method includes: a supply operation of supplying a processing gas into a processing container in which a substrate is accommodated, the processing gas including a silicon-containing gas, a nitrogen-containing gas, and a diluent gas; and a film forming operation of plasmarizing the processing gas by supplying, into the processing container, power obtained by phase-controlling and superimposing first power with a first frequency in a VHF band and second power with a second frequency different from the first frequency in the VHF band, and forming a silicon nitride film on the substrate by the plasmarized processing gas.

A system is provided. The system includes a semiconductor fabrication station and a rescue system. The semiconductor fabrication station includes a tank to hold a liquid. The semiconductor fabrication station is configured to perform a semiconductor fabrication process on a semiconductor wafer disposed in the tank. The rescue system is configured to monitor a signal line indicative of a state of the semiconductor fabrication station. The rescue system is configured to open a drain valve of the tank to drain the liquid from the tank in response to the signal line indicating a potential fabrication station error.

A chip peeling apparatus is provided that includes a housing having a seating surface for mounting a wafer, a recessed portion and a first vacuum suction hole in the seating surface, and a second vacuum suction hole, a blow hole and a protrusion in the recessed portion. The chip peeling apparatus further includes: a vacuum suction source that evacuates the first vacuum suction hole and the second vacuum suction hole; a pressure detector that detects a degree of vacuum of the second vacuum suction hole; a pressurization source that sends a fluid to the blow hole; a flow rate control valve; and a controller that determines a flow rate of the fluid to be sent to the blow hole, based on the degree of vacuum, and controls, via the flow rate control valve, the fluid sent from the pressurization source to flow at the determined flow rate.

A semiconductor processing tool cluster includes: a first semiconductor processing tool including a microwave generator comprising at least one magnet and configured to perform semiconductor wafer processing using microwave energy produced by the microwave generator; a second processing tool configured to perform semiconductor wafer processing using a plasma generated in a process chamber of the second processing tool; and a magnetic field shield comprising at least one closed annular shell disposed around the microwave generator of the first semiconductor processing tool, the at least one closed annular shell comprising a material with magnetic permeability that is greater than the magnetic permeability of free space. In some cases, a magnetometer may be arranged to measure a magnetic field at a location outside of the magnetic field shield, and a circuit performs a remedial action based on a magnetic field measurement output by the magnetometer.

A gas control system for semiconductor equipment. The system comprises a first process chamber, a first exhaust pipe, a first inlet pipe, an energy dissipating device for dissipating energy of the gas, a sub-pipe, a main pipe, a first energy controller for controlling a first energy of the gas passing through the first inlet pipe, and a second energy controller for controlling a second energy of the gas passing through the sub-pipe, wherein the gas is supplied to the energy dissipating device through the first exhaust pipe and the first inlet pipe, thereafter the gas is discharged to the outside through the sub-pipe and the main pipe, the first energy of the gas in the first inlet pipe is controlled to a constant value by the first energy controller, and the second energy of the gas in the sub-pipe is controlled to a constant value by the second energy controller.

An apparatus and method for debonding a pair of bonded wafers are disclosed herein. In some embodiments, the debonding apparatus, comprises: a wafer chuck having a preset maximum lateral dimension and configured to rotate the pair of bonded wafers attached to a top surface of the wafer chuck, a pair of circular plate separating blades including a first separating blade and a second separating blade arranged diametrically opposite to each other at edges of the pair of bonded wafers, wherein the first and the second separating blades are inserted between a first and a second wafers of the pair of bonded wafers, and at least two pulling heads configured to pull the second wafer upwardly so as to debond the second wafer from the first wafer.

A modular multi-pipe pressure regulator for semiconductor manufacturing machines includes 210 pump drive connectors, 210 switches, 210 pressure detectors, 210 rotation speed regulators, 210 alarms and a controller. Each pressure detector is installed in a pipeline of a semiconductor manufacturing machine for detecting the pipeline to feed back a pressure value. The controller has an intelligent computing model. When receiving external power drive, the controller independently controls each switch and lets the pump drive connectors and the rotation speed regulators drive and operate the suction pump and monitor its suction pump to obtain multiple time point rotational speeds after the switch is turned on. The controller detects each pressure value according to a set value and drives the rotation speed regulator to regulate the rotation speed of the suction pump, in order to maintain the pressure value of the pipeline within a tolerance range of the set value.

A substrate processing apparatus including a chamber, a substrate support platform provided inside the chamber, a lamp disposed at an upper portion of the chamber, and emitting light to an inside of the chamber, and a plate interposed between the lamp and the substrate support platform in the chamber, and including a plurality of holes through which the light, when emitted by the lamp, passes, wherein a surface of the substrate support platform is positioned to be irradiated with the light, and wherein for at least a first hole of the plurality of holes, a diameter of the hole becomes greater in a direction going downward from a top surface of the plate toward a bottom surface of the plate.

A method for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. In some embodiments, a first in-situ process including a pre-treatment process of the work-function metal layer is performed. By way of example, the pre-treatment process removes an oxidized layer of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the first in-situ process, a second in-situ process including a deposition process of another metal layer over the treated work-function metal layer is performed.