Implementations of an image sensor package may include an image sensor die including at least one bond pad thereon; a bond wire wirebonded to the at least one bond pad; and an optically transmissive lid coupled to the image sensor die with an optically opaque film adhesive over the at least one bond pad. The bond wire may extend through the optically opaque film adhesive to the at least one bond pad.

A semiconductor device according to an embodiment includes a semiconductor chip, a substrate, and an adhesive layer. The substrate supports the semiconductor chip. The adhesive layer is disposed between the semiconductor chip and the substrate. The adhesive layer bonds the semiconductor chip and the substrate. The adhesive layer has a first portion and a plurality of second portions. The first portion is formed of a first material. The plurality of second portions are formed of a second material. The second material has a greater elastic modulus and a greater thermal conductivity than the first material. The second portions are located inside the first portion. Each of the second portions is in contact with and connects the semiconductor chip and the substrate.

A copper paste for joining contains metal particles and a dispersion medium, in which the copper paste for joining contains copper particles as the metal particles, and the copper paste for joining contains dihydroterpineol as the dispersion medium. A method for manufacturing a joined body is a method for manufacturing a joined body which includes a first member, a second member, and a joining portion that joins the first member and the second member, the method including: a first step of printing the above-described copper paste for joining to at least one joining surface of the first member and the second member to prepare a laminate having a laminate structure in which the first member, the copper paste for joining, and the second member are laminated in this order; and a second step of sintering the copper paste for joining of the laminate.

A semiconductor device assembly is provided. The assembly includes a package substrate which has a tunneled interconnect structure. The tunneled interconnect structure has a solder-wettable surface, an interior cavity, and at least one microvia extending from the surface to the cavity. The assembly further includes a semiconductor device disposed over the substrate and a solder joint coupling the device and the substrate. The joint comprises the solder between the semiconductor device and the interconnect structure, which includes the solder on the surface, the solder in the microvia, and the solder within the interior cavity.

In some embodiments, a device includes a chip-on-interposer structure on a first side of a package substrate, and a first ring structure on the first side of the package substrate. The first ring structure extends around a perimeter of the chip-on-interposer structure. A lid may be disposed on the first ring structure. The device may also include an array of connectors on a second side of the package substrate, wherein the second side of the package substrate is opposite a first side of the package substrate. A second ring structure may be on the second side of the package substrate. The second ring structure is positioned around a perimeter of the array of connectors.

Implementations of an image sensor package may include an image sensor die including at least one bond pad thereon; a bond wire wirebonded to the at least one bond pad; and an optically transmissive lid coupled to the image sensor die with an optically opaque film adhesive over the at least one bond pad. The bond wire may extend through the optically opaque film adhesive to the at least one bond pad.

Provided is a semiconductor device including a substrate, a semiconductor chip on the substrate, and a bonding layer between the substrate and the semiconductor chip, wherein the bonding layer includes a transition metal, a low-melting-point metal having a melting point lower than a melting point of the transition metal, a noble metal, and an alloy thereof, and a percentage of the noble metal in the bonding layer is greater in a central portion of the bonding layer than at peripheral portions of the bonding layer in a first direction of the bonding layer.

A semiconductor package and a method for forming the same are provided. The method includes: providing a substrate; mounting a semiconductor die on a top surface of the substrate; forming a barrier wall on a peripheral area of a top surface of the semiconductor die; dispensing a first fluid material on the top surface of the semiconductor die, wherein the barrier wall prevents the first fluid material from flowing across it; and curing the first fluid material to form a back side metallization (BSM) layer.

A method includes attaching a permeable plate to a metal lid, with the permeable plate including a metallic material, and dispensing a liquid-metal-comprising media to a first package component. The first package component is over and bonded to a second package component. The liquid-metal-comprising media includes a liquid metal therein. The method further includes attaching the metal lid to the second package component. During the attaching, the liquid-metal-comprising media migrates into the permeable plate to form a composite thermal interface material.