The present invention relates to an etching device and an etching method thereof, the etching device comprising: an etchant supply unit for supplying an etchant to an etching chamber; a rinsing liquid supply unit for supplying a rinsing liquid to the etching chamber, a cleaning liquid supply unit for supplying a cleaning liquid to the etching chamber, and a first pressurization maintaining unit for maintaining at least one of the etching chamber and the etchant supply unit in a pressurized atmosphere.

A plasma processing method includes (a) forming a first protective film on a surface of an inner member of a chamber by a first processing gas including a precursor gas that does not contain halogen; and (b) performing plasma processing on a processing target that is carried in inside the chamber by a plasma of a second processing gas after the first protective film is formed on the surface of the member.

A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed in a first process chamber to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process is performed in the first process chamber removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

Disclosed herein is an endpoint detection having an optical bundle configured to emit light through a ceiling of a processing chamber. The optical bundle has a plurality of fibers configured to transmit the light from a light source towards a substrate and is configured to receive light reflected from the substrate. The plurality of fibers include a first emitting fiber and a first receiving fiber. The first receiving fiber is radially disposed at a pairing angle from the first emitting fiber, and is configured to receive light emitted from the first emitting fiber. The plurality of fibers further include a second emitting fiber and a second receiving fiber. The second receiving fiber is radially disposed at the pairing angle from the second emitting fiber. The second receiving fiber is configured to receive light originating from the second emitting fiber. The pairing angle is between about 175 degrees and 185 degrees.

A method is provided for etching a silicon carbide accretion from one or more workpieces of a reaction chamber for the deposition of silicon carbide layers on a substrate. The method comprises the steps of: (I) providing a silicon carbide accretion on one or more workpieces of a reaction chamber of a reactor for deposition of silicon carbide; (II) executing at least one cycle of an etching process. Further provided is a reactor adapted to execute the method.

A fluid control device that controls a fluid supplied into a process container includes: a flow path block; and a fluid controller installed to the flow path block. The flow path block includes: a gas supply flow path including an inlet, through which the fluid is introduced, and an outlet through which the fluid flows into the process container; and a storage chamber that stores the fluid in the gas supply flow path between the inlet and the outlet. The fluid controller includes: a first valve that opens and closes the gas supply flow path between the inlet and the storage chamber; and a second valve that opens and closes the gas supply flow path between the storage chamber and the outlet.

A method used in forming memory circuitry comprises forming a stack where strings of memory cells will be formed and a select-gate region directly above the stack. The stack comprises vertically-alternating different-composition first tiers and second tiers having lower channel openings extending there-through. The select-gate region comprises upper channel openings extending there-through and that are individually directly above and extend to individual of the lower channel openings. Storage material of the strings of memory cells is formed simultaneously in the upper and lower channel openings. Then, insulative charge-passage material of the strings of memory cells is formed simultaneously in the upper and lower channel openings. Then, channel material is formed simultaneously in the upper and lower channel openings. The storage material is removed from the upper channel openings. After the removing, a select gate is formed in the select-gate region operatively aside the channel material in the select-gate region. Other embodiments, including structure, are disclosed.

An example of an etching method according to the present disclosure, includes: performing a first process which includes forming a first layer containing halogen or holding the substrate in a gas atmosphere containing halogen; and performing a second process which includes removing a portion of the first layer and a portion of the substrate under the portion of the first layer by supplying the portion of the first layer with ions sourced from a solid material.

Disclosed are techniques for fabricating transistors such as gate all around (GAA) transistors and techniques for measuring nano channel thicknesses using Raman spectroscopy.

Methods, systems, and media for deposition control in a process chamber are provided. In some embodiments, a method comprises (a) obtaining, at a present time, information indicating a status of one or more components of the process chamber during performance of a deposition process on one or more wafers. The method may comprise (b) determining whether adjustments to one or more control components of the process chamber are to be made by providing an input based on the obtained information to a trained machine learning model configured to determine adjustments as an output, wherein the adjustments to the one or more control components cause a change in the deposition process. The method may comprise (c) transmitting instructions to a controller of the process chamber that cause the adjustments to the one or more control components to be implemented.