According to one embodiment, a semiconductor device includes: a circuit board; a first semiconductor chip mounted on a face of the circuit board; a resin film covering the first semiconductor chip; and a second semiconductor chip having a chip area larger than a chip area of the first semiconductor chip, the second semiconductor chip being stuck to an upper face of the resin film and mounted on the circuit board. The resin film entirely fits within an inner region of a bottom face of the second semiconductor chip when viewed in a stacking direction of the first and second semiconductor chips.

In a general aspect, a method of sintering a semiconductor device assembly having a surface projection includes applying sintering material to a die attach surface. The method also includes disposing a semiconductor die on the sintering material, the semiconductor die having a surface including a substantially planar portion and at least one projection extending from the substantially planar portion in a direction orthogonal to the surface. The method also includes disposing a film on the surface of the semiconductor die, the film including at least one spacer, where the film is disposed such that the at least one spacer contacts the substantially planar portion. The method also includes applying pressure to the film. The method also includes applying thermal energy at a first sintering temperature to sinter the semiconductor die to the die attach surface. The method also includes removing the film.

A method of forming a semiconductor structure is provided. Two wafers are first bonded by oxide bonding. Next, the thickness of a first wafer is reduced using an ion implantation and separation approach, and a second wafer is thinned by using a removal process. First devices are formed on the first wafer, and a carrier is then attached over the first wafer, and an alignment process is performed from the bottom of the second wafer to align active regions of the second wafer for placement of the second devices with active regions of the first wafer for placement of the first devices. The second devices are then formed in the active regions of the second wafer. Furthermore, a via structure is formed through the first wafer, the second wafer and the insulation layer therebetween to connect the first and second devices on the two sides of the insulation layer.

A workpiece handling apparatus includes a workpiece chuck, and a robotic device. The workpiece chuck is for holding a workpiece thereon, wherein the workpiece chuck includes a porous supporting platform, a gas permeable buffer layer covering a supporting surface of the porous supporting platform, and a vacuum system in gas communication with the porous supporting platform and the gas permeable buffer layer. The robotic device is movably disposed over the workpiece chuck for picking up the workpiece and placing the workpiece on the gas permeable buffer layer.

A semiconductor package may include: a first wiring structure including a first wiring pattern and a first wiring insulating layer surrounding the first wiring pattern; a first semiconductor chip above the first wiring structure; a second semiconductor chip above the first wiring structure and spaced apart from the first semiconductor chip in a horizontal direction; an adhesive layer including a first portion on an upper surface of the first semiconductor chip, and further including a second portion on an upper surface of the second semiconductor chip; a molding member on the first wiring structure and surrounding side surfaces of each of the first semiconductor chip, the second semiconductor chip, and the adhesive layer; and a heat dissipation member on an upper surface of each of the molding member and the adhesive layer.

In order to achieve the above-described objects, according to an aspect of the present disclosure, a display device includes a substrate which includes an active area and a non-active area extending from the active area and including a pad area and is formed of any one of a transparent conducting oxide and an oxide semiconductor; a plurality of inorganic insulating layers disposed on the substrate; a dam member having one end disposed on the pad area and the other end disposed at the outside of the substrate; and a plurality of flexible films which is disposed to cover the dam member and has one end disposed in the pad area. Accordingly, the dam member which covers the pad area is formed to minimize the crack of the plurality of inorganic insulating layers at the edge of the substrate.