Gate contact structures disposed over active portions of gates and methods of forming such gate contact structures are described. For example, a semiconductor structure includes a substrate having an active region and an isolation region. A gate structure has a portion disposed above the active region and a portion disposed above the isolation region of the substrate. Source and drain regions are disposed in the active region of the substrate, on either side of the portion of the gate structure disposed above the active region. A gate contact structure is disposed on the portion of the gate structure disposed above the active region of the substrate.

A method for producing a semiconductor power device includes forming a gate trench from a surface of the semiconductor layer toward an inside thereof. A first insulation film is formed on the inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiO2 is formed in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film.

A method of forming an electrode in accordance with an exemplary embodiment includes a process of forming a mask pattern on one surface of a base to expose a partial area of the one surface of the base by using a mask material that is polymer including an end tail having at least one bonding structure of covalent bond and double bond, a process of loading the base on which the mask pattern is formed into a chamber, and a process of forming a conductive layer containing copper on the exposed one surface of the base by using an atomic layer deposition method that alternately injects a source material containing copper and a reactive material that reacts with the source material into the chamber. Thus, according to the method of forming an electrode in accordance with an exemplary embodiment, a thin-film caused by a material for forming an electrode is not formed on a surface of the mask pattern. Therefore, a residue is not remained when the mask pattern is removed to prevent a defect caused by the residue from being generated.

A method for manufacturing a semiconductor structure includes: forming a gate dielectric layer on a patterned structure, the gate dielectric layer having a first dielectric region and a second dielectric region displaced from each other; forming a cladding layer on the gate dielectric layer, a material of the cladding layer being different from that of the gate dielectric layer; introducing ions into the first dielectric region through the cladding layer while the second dielectric region is shielded from the ions, such that a concentration of the ions in the first dielectric region is greater than a concentration of the ions in the second dielectric region; and removing the cladding layer to expose the gate dielectric layer; and after removing the cladding layer, removing the first dielectric region to expose a first surface of the patterned structure while the second dielectric region remains on a second surface of the patterned structure.