H10W70/654

Display device and manufacturing method thereof for reducing pixel defects
12610859 · 2026-04-21 · ·

A display device includes a substrate, a light emitting element on the substrate, and including a first end portion and a second end portion that are aligned in a first direction that is substantially parallel to an upper surface of the substrate, a first contact electrode in contact with the first end portion of the light emitting element, a first electrode on the first contact electrode, and electrically connected to the first end portion of the light emitting element through the first contact electrode, and a second electrode electrically connected to the second end portion of the light emitting element.

Semiconductor structure and semiconductor device

A semiconductor structure and semiconductor device are provided. The semiconductor structure includes a plurality of layers of memory modules stacked on an upper surface of the logic chip in a first direction which is perpendicular to the upper surface of the logic chip. Each storage module includes a plurality of memory chips stacked in a second direction which is parallel to the upper surface. Each memory chip in a top layer includes one second wireless communication part; and each memory chip in a non-top layer includes two second wireless communication parts arranged in the first direction and a wired communication part connected between the two second wireless communication parts. Two adjacent second wireless communication parts located on different memory chips in the first direction communicate with each other wirelessly; and each first wireless communication part communicates wirelessly with a closest second wireless communication part in a bottom memory chip.

Wafer to wafer high density interconnects

An integrated circuit package provides a high bandwidth interconnect between wafers using a very high density interconnect using a silicon bridge or a multi-layer flex between wafers. In some embodiments, more than one wafer may be mounted and connected with a rigid silicon bridge onto a common substrate. This common substrate can be matched, with respect to their coefficients of thermal expansion (CTE), to the silicon wafer. The CTE matched substrate can reduce the thermal mechanical stress on the wafers and the rigid silicon bridge interconnect. In some embodiments, a thinned silicon bridge is utilized to interconnect wafers which are mounted on separate glass substrates. The thinned bridge would allow for mechanical compliance between the wafers. In some embodiments, the wafers can be mounted onto separate glass substrates and attached with a fine pitch multi-layer flex structure which provides compliance between the wafers.