A method of forming a semiconductor device includes: forming a conductive pad over and electrically coupled to an interconnect structure, where the interconnect structure is disposed over a substrate and electrically coupled to electrical components formed on the substrate; forming a passivation layer over the conductive pad and the interconnect structure; and forming a sacrificial test structure over the passivation layer and electrically coupled to the conductive pad, where the sacrificial test structure includes a sacrificial pad extending along an upper surface of the passivation layer distal from the substrate, and includes a sacrificial via extending into the passivation layer and contacting the conductive pad.

A method of manufacturing a semiconductor package includes providing a wafer substrate including a first a chip area and an edge area; forming first and second conductive layers on the wafer substrate; forming a photoresist pattern, including openings, on the second conductive layer, wherein the photoresist pattern includes a first photoresist pattern on the chip area and a second photoresist pattern on the edge area; forming conductive patterns within the openings; removing the first photoresist pattern from the photoresist pattern, and portions of the first and second conductive layers overlapping with the first photoresist pattern; removing the second photoresist pattern from the photoresist pattern, and a portion of the second conductive layer overlapping the second photoresist pattern, such that a portion of the first conductive layer on the edge area is exposed; and forming a protective film such that the protective film is on the conductive patterns.

A method of making an assembly can include juxtaposing a top surface of a first electrically conductive element at a first surface of a first substrate with a top surface of a second electrically conductive element at a major surface of a second substrate. One of: the top surface of the first conductive element can be recessed below the first surface, or the top surface of the second conductive element can be recessed below the major surface. Electrically conductive nanoparticles can be disposed between the top surfaces of the first and second conductive elements. The conductive nanoparticles can have long dimensions smaller than 100 nanometers. The method can also include elevating a temperature at least at interfaces of the juxtaposed first and second conductive elements to a joining temperature at which the conductive nanoparticles can cause metallurgical joints to form between the juxtaposed first and second conductive elements.

The present disclosure is directed to embodiments of a conductive structure on a conductive barrier layer that separates the conductive structure from a conductive layer on which the conductive barrier layer is present. A gap or crevice extends along respective surfaces of the conductive structure and along respective surfaces of one or more insulating layers. The gap or crevice separates the respective surfaces of the one or more insulating layers from the respective surfaces of the conductive structure. The gap or crevice provides clearance in which the conductive structure may expand into when exposed to changes in temperature. For example, when coupling a wire bond to the conductive structure, the conductive structure may increase in temperature and expand into the gap or crevice. However, even in the expanded state, respective surfaces of the conductive structure do not physically contact the respective surfaces of the one or more insulating layers.

A microelectronic structure with through substrate vias (TSVs) and method for forming the same is disclosed. The microelectronic structure can include a bulk semiconductor with a via structure. The via structure can have a first and second conductive portion. The via structure can also have a barrier layer between the first conductive portion and the bulk semiconductor. The structure can have a second barrier layer between the first and second conductive portions. The second conductive portion can extend from the second barrier layer to the upper surface of the bulk semiconductor. The microelectronic structure containing TSVs is configured so that the microelectronic structure can be bonded to a second element or structure.

Disclosed herein are methods for direct bonding. In some embodiments, a direct bonding method comprises preparing a first bonding surface of a first element for direct bonding to a second bonding surface of a second element; and after the preparing, providing a protective layer over the prepared first bonding surface of the first element, the protective layer having a thickness less than 3 microns.

A microelectronic structure with through substrate vias (TSVs) and method for forming the same is disclosed. The microelectronic structure can include a bulk semiconductor with a via structure. The via structure can have a first and second conductive portion. The via structure can also have a barrier layer between the first conductive portion and the bulk semiconductor. The structure can have a second barrier layer between the first and second conductive portions. The second conductive portion can extend from the second barrier layer to the upper surface of the bulk semiconductor. The microelectronic structure containing TSVs is configured so that the microelectronic structure can be bonded to a second element or structure.

A bonded structure is provided. The bonded structure includes a first stack structure on a substrate, a second stack structure over the first stack structure, and a bonding interface between the first stack structure and the second stack structure. The second stack includes a via structure extending in the second stack structure and towards the bonding interface, the via structure having a first width closer to the bonding interface and a second width further away from the bonding interface. The first width is greater than the second width.

A described example includes: a semiconductor die having a device side surface and an opposing backside surface, the backside surface mounted to a die pad of a lead frame, the lead frame comprising conductive leads spaced from the die pad; a conductor layer overlying the device side surface; bond pads including bond pad conductors formed in the conductor layer, a nickel layer over the bond pad conductors, and a palladium or gold layer over the nickel layer; conductor traces formed in the conductor layer, the conductor traces free from the nickel layer and the palladium or gold layer; bond wires bonded to the bond pads electrically coupling the bond pads to conductive leads; and mold compound covering the semiconductor die, the bond pads, the bond wires, and portions of the lead frame, wherein portions of the conductive leads are exposed from the mold compound to form terminals.

A semiconductor device includes: a first semiconductor structure including a stacked structure of a first dielectric layer and a first bonding dielectric layer; a second semiconductor structure including a stacked structure of a second dielectric layer and a second bonding dielectric layer; and a bonding pad penetrating the stacked structure of the first dielectric layer and the first bonding dielectric layer, and the stacked structure of the second dielectric layer and the second bonding dielectric layer, wherein the first bonding dielectric layer and the second bonding dielectric layer contact each other, and a first width of a first portion of the bonding pad penetrating the first dielectric layer is greater than each of a second width of a second portion of the bonding pad penetrating the first bonding dielectric layer, and a third width of a third portion of the bonding pad penetrating the second bonding dielectric layer.