A ring assembly for a substrate support is disclosed herein. The ring assembly has a ring shaped body. The ring shaped body has an inner diameter and an outer diameter, a top surface, an inner portion at the inner diameter, and an outer portion at the outer diameter. A carbon based coating is disposed on the top surface of the ring shaped body, wherein the carbon based coating is thicker on the inner portion of the ring shaped body than the outer portion of the ring shaped body.

A semiconductor structure including a pillar structure and a spacer structure is provided. The pillar structure is disposed over a substrate, and comprises: a lower layer, disposed on the substrate; an upper layer, disposed over the lower layer; and a dielectric layer, disposed between the lower layer and the upper layer, wherein the upper layer includes a first portion and a second portion disposed below and connecting the first portion. The spacer structure laterally surrounds the pillar structure, and comprises: an upper portion, surrounding the first portion of the upper layer; and a lower portion, disposed below and connecting the upper portion, wherein a first thickness of the upper portion is substantially greater than a second thickness of the lower portion. A method for manufacturing a semiconductor structure is also provided.

According to an embodiment, semiconductor manufacturing equipment includes a processing chamber for processing a substrate on which a photoresist film is formed, a stage configured to support the substrate, an annular edge ring configured to enclose the substrate, an annular guard ring configured to cover a circumferential edge of the substrate from above, and a conveyor configured to convey at least the guard ring, in which the guard ring is configured to have an inner circumferential end located between an outer circumferential end of the substrate supported on the stage and an outer circumferential end of the photoresist film.

A method includes forming a first masking layer over a substrate, the first masking layer including a first mask line and a second mask line, heating respective top surfaces of the first mask line and the second mask line with polarized light, and forming a second masking layer over the first masking layer with an area selective deposition process. The second masking layer is thinner over a sidewall of the first mask line than over a top surface of the first mask line.

A method of processing a substrate using an apparatus for processing a substrate, which generates plasma in a processing space by applying microwaves is provided, the method including a plasma treatment operation of processing a substrate using plasma; a replacing operation of performing the plasma treatment operation a predetermined number of times and replacing a component included in the apparatus; and a backup operation of backing up the apparatus after the replacing operation, wherein the backup operation includes a preheating operation in which the temperature adjusting unit increases a temperature of the processing space by increasing a temperature of coolant supplied to the process chamber; and a bake purge operation performed after the preheating operation and including removing impurities from the component.