In a general aspect, a semiconductor device assembly includes a conductive member, a conductive adhesive disposed on the conductive member, and a semiconductor die disposed on the conductive adhesive. The conductive adhesive couples the semiconductor die with the conductive member. The device assembly further includes a barrier included in the conductive member. The barrier is proximate to an edge of the semiconductor die and configured to inhibit outflow of the conductive adhesive.

A power module includes a heat dissipation substrate, a carrier, a connection substrate, a power transistor chip group, a plurality of conductive members, a plurality of external connection leads, and a package. The carrier is disposed on the heat dissipation substrate and includes an insulation plate and a patterned metal circuit layer. The connection substrate is disposed on the patterned metal circuit layer and includes a multilayered metallic connection structure. The power transistor chip group is disposed on the connection substrate and includes a plurality of power transistor chips electrically connected to one another through the multilayered metallic connection structure. The conductive members are electrically connected to the patterned metal circuit layer of the carrier. The external connection leads are disposed on the patterned metal circuit layer. The package packages the heat dissipation substrate, the carrier, the connection substrate, the power transistor chip group, and the external connection leads.

A semiconductor device includes a resin housing, a substrate, a plurality of semiconductor elements, and a signal terminal. Each of the semiconductor elements has a first main electrode on a first surface, a second main electrode and a pad on a second surface opposite to the first surface. The first main electrodes are joined to a wiring of the substrate. The signal terminal is inserted in the housing, and electrically connected to the pads. The signal terminal includes a branch terminal. The branch terminal has a single first connection portion projecting from the housing to be connected to an external device, a plurality of second connection portions exposed from the housing and individually connected to the pads having a same function of the semiconductor elements, and a coupling portion disposed within the housing and electrically connecting the first connection portion and the second connection portions.

A semiconductor device includes at least one semiconductor element, a metal plate and a solder. The semiconductor element includes a semiconductor substrate having an element region, a main electrode disposed at a position overlapping with the element region on one surface of the semiconductor substrate, a signal line disposed at a position overlapping with the element region on the one surface and different from the position of the main electrode, and an insulating film covering the signal line. The metal plate has a joint portion to the main electrode. The solder is interposed between the main electrode and the joint portion and joins the main electrode and the metal plate. The joint portion is disposed to avoid the signal line.

A semiconductor device includes a substrate, a plurality of semiconductor elements, and a main terminal. Each of the plurality of semiconductor elements has a main electrode. The plurality of semiconductor elements are disposed on one surface of the substrate, and are connected in parallel to each other. The main terminal is a common connection target to which the plurality of semiconductor elements are electrically connected. A wiring resistance between the main terminal and the main electrode of a corresponding semiconductor element is different in accordance with a number of semiconductor elements disposed adjacent to the corresponding semiconductor element, and the wiring resistance increases as the number of the semiconductor elements disposed adjacent to the corresponding semiconductor element increases.

A semiconductor device includes an insulating substrate, a plurality of semiconductor elements, a gate terminal, a printed circuit board and a passive component. The insulating substrate has a wiring. Each of the plurality of semiconductor elements has a first main electrode disposed on a first surface, a second main electrode disposed on a second surface opposite to the first surface, and a gate pad disposed on the second surface. The first main electrodes of the plurality of semiconductor elements are commonly connected to the wiring. The printed circuit board provides a gate wiring that electrically relays the gate pad and the gate terminal. The passive component includes a ferrite bead or a balance resistor. The passive component is mounted on the printed circuit board to adjust an impedance of the gate wiring.

Provided is a semiconductor device with a configuration capable of ensuring insulation properties between terminals having different potentials and arranged with an insulating layer interposed. The semiconductor device includes: a first terminal; a second terminal having a part opposed to the first terminal and another part provided with a first opening not opposed to the first terminal; and an insulating layer including a body part interposed between the first terminal and the second terminal opposed to each other and a first protrusion connected to the body part and inserted to the first opening.