A semiconductor device includes a semiconductor element having a first electrode and a second electrode, a first conductive member being located on a first side in a thickness direction with respect to the first electrode and having a first reverse surface to face a second side in the thickness direction, a second conductive member being located on the first side in the thickness direction with respect to the second electrode and having a second reverse surface to face the second side in the thickness direction, a first conductive bonding material interposed between the first electrode and the first reverse surface and bonded to the first electrode and the first conductive member, and a second conductive bonding material interposed between the second electrode and the second reverse surface and bonded to the second electrode and the second conductive member. An area of the second reverse surface is smaller than an area of the first reverse surface. A distance between the second electrode and the second reverse surface in the thickness direction is smaller than a distance between the first electrode and the first reverse surface in the thickness direction.

A method for manufacturing a singulated semiconductor product from a package is provided, and includes the steps of a) providing the bottom frame with the clip matrix with a semiconductor component and placing them in a mold cavity, b) closing the mold, c) moving retractable pins through openings in the mold, so that the tips of the pins come into contact with the tie bars or the clip tie-bars of the clip matrix, d) performing the molding operation using the encapsulating material, e) retracting the pins away from the package, f) opening the mold, g) removing the package from the mold, and h) singulating the package into a separate product by sawing along and trimming the microleads. With the above steps at least one encapsulated and singulated semiconductor product is formed, that has notches formed on the sides thereof, that expose either tie bars or clip tie-bars.

A semiconductor device includes a semiconductor element, and a first terminal that is positioned on a first side in a first direction from the semiconductor element and electrically connected to the semiconductor element. In the first direction, a first channel is provided between the semiconductor element and the first terminal. The semiconductor element is in contact with the first channel. In one example, the semiconductor device additionally includes a first conductive member that is electrically connected to the semiconductor element and the first terminal. The first conductive member is contained in the first channel.

A switching power device comprises a device lead-frame. Gates, Kelvin sources and a drain are formed on the device lead-frame, the gates and the Kelvin sources are arranged at one end of the device lead-frame, and the drain is arranged at the other end of the device lead-frame; and two gates and two Kelvin sources are provided. One end of the device lead-frame is sequentially provided with the gate, the Kelvin source, the Kelvin source and the gate, so as to form a symmetrical pin structure.

A semiconductor die package includes a semiconductor transistor die having a contact pad on an upper main face. The semiconductor die package also includes an electrical conductor disposed on the contact pad and fabricated by laser-assisted structuring of a metallic material, and an encapsulant covering the semiconductor die and at least a portion of the electrical conductor.

Embodiments disclosed herein include a package substrate. In an embodiment, the package substrate comprises a core with a first surface and a second surface, where the core comprises glass. In an embodiment, a first via is through the core, where the first via comprise a conductive material, and a film over the first surface of the core, where the film is an adhesive. In an embodiment, a second via is through the film, where the second via comprises a conductive material, where the second via contacts the first via. In an embodiment, a centerline of the second via is aligned with a centerline of the first via. In an embodiment, a buildup layer is over the film.

To manufacture a semiconductor device, a first heat treatment for curing a first adhesive material of a conductive paste type is performed, after a semiconductor chip is mounted on a die pad of a lead frame via the first adhesive material. After that, a metal plate is disposed on a pad of the semiconductor chip such that the metal plate faces the pad of the semiconductor chip via a second adhesive material of a conductive paste type, and a second heat treatment is performed for curing each of the first adhesive material and the second adhesive material. A time of the first heat treatment is less than a time of the second heat treatment. After the first adhesive material is cured by the first heat treatment, the first adhesive material is further cured by the second heat treatment.

Implementations of a method of providing wettable flanks on leads of a semiconductor package may include applying mold compound around a plurality of leads included in a leadframe; electroplating exposed portions of the plurality of leads; cutting at least one lead of the plurality of leads to expose a flank of the least one lead; applying an electrically conductive layer over the plurality of leads; electroplating the flank of the at least one lead to render the flank wettable; removing the electrically conductive layer from the plurality of leads; and singulating to form a semiconductor package.

A semiconductor package and method are disclosed. In one example, the semiconductor package includes a package body. A first diepad is at least partially uncovered by the package body at the first main surface. A second diepad is at least partially uncovered by the package body at the first main surface. A first semiconductor chip is arranged on the first diepad. A second semiconductor chip is arranged on the second diepad. The semiconductor package further includes at least one lead protruding out of the package body at the side surface. A first groove and a second groove are formed in the first main surface. The method includes a method of making the semiconductor package.

A semiconductor package, a method of manufacturing thereof, and a lead frame are provided, the package includes the lead frame and a die pad and a bond clip. The lead frame exhibits a longitudinal and a transverse dimension perpendicular to the longitudinal dimension. The package includes a die having a first die side mounted to the die pad mounting portion and a second die side opposite to the first, and a bond clip exhibiting a first and second longitudinal dimension perpendicular to the first longitudinal dimension. The bond clip has a first clip mounted to the bond clip of the lead frame using solder and a second clip mounted to the second die side of the die, the bond clip of the lead frame has features to prevent displacement of the bond clip in both the longitudinal and transverse dimension, and to confine the solder on the bond clip.