A post CMP cleaning apparatus is provided. The post CMP cleaning apparatus includes a cleaning stage. The post CMP cleaning apparatus also includes a rotating platen disposed in the cleaning stage, and the rotating platen is configured to hold and rotate a semiconductor wafer. The post CMP cleaning apparatus further includes a vibrating device disposed over the rotating platen. The post CMP cleaning apparatus further includes a solution delivery module disposed near the vibrating device and configured to deliver a cleaning fluid to the semiconductor wafer. The vibrating device is configured to provide the cleaning fluid with a specific frequency which is at least greater than 100 MHz while the rotating platen is rotating the semiconductor wafer, so that particles on the semiconductor wafer are removed by the cleaning fluid.

A substrate processing apparatus includes a substrate holding portion, an immersion bath, a first supplying portion, and a moving mechanism. The substrate holding portion holds and rotates a substrate. The immersion bath stores a processing liquid, accommodates the substrate, and immerses the substrate in the processing liquid. The first supplying portion supplies the processing liquid to the immersion bath. The moving mechanism relatively moves the substrate holding portion and the immersion bath. The moving mechanism switches a state of the substrate between a non-immersion state in which the substrate is located outside the immersion bath and an immersion state in which the substrate is located inside the immersion bath and immersed in the processing liquid by moving the substrate holding portion or the immersion bath.

A substrate processing brush according to some embodiments of the present disclosure is provided. The substrate processing brush includes a holder; a substrate processing pad detachably disposed in the holder, processing the substrate; and a substrate processing sweeper connected to the holder, processing the substrate together with the substrate processing pad, wherein a first portion of the substrate processing pad is disposed inside the holder, and a second portion of the substrate processing pad is protruded to the outside of the holder by passing through one surface of the holder, and the substrate processing sweeper is connected to one surface of the holder so that it is to be adjacent to the second portion of the substrate processing pad protruded to the outside of the holder, and is extended from one surface of the holder.

A wafer cleaning device includes a plurality of brush systems arranged in a line in a first direction and configured to clean a wafer. Each of the plurality of brush systems includes a body having a tube shape extending in the first direction, a nodule arranged on an outer surface of the body, and a driveshaft extending in the first direction and configured to integrally rotate with the body. The plurality of brush systems are configured to independently rotate with the first direction as a rotation axis.

A method of cleaning wafer-cleaning brushes includes passing a wafer having a first polished main side and an opposing unpolished backside between a pair of substantially cylindrical shaped wafer-cleaning brushes are rotated about an axial direction of the brushes while passing the wafer between the pair of wafer-cleaning brushes. A cleaning solution is applied to the brushes while passing the wafer between the pair of wafer-cleaning brushes. While passing between the pair of brushes, the first polished main side of the wafer faces a first direction, the first direction is an opposite direction to which a polished side of a production wafer faces during a subsequent polished wafer cleaning operation. The substantially cylindrical shaped wafer-cleaning brushes include a plurality of protrusions on an external surface of the brushes, and the brushes contact the wafer at least a portion of time the wafer is passing between the pair of brushes.

A cleaning brush includes a body having a truncated cone shape and having a first region configured to contact a central region of a wafer and a second region configured to contact an edge region of the wafer, a plurality of first nodules on the first region and protruding outwardly from the body, and a plurality of second nodules on the second region and protruding outwardly from the body, where a first ratio of a number of the plurality of first nodules to a surface area of the first region is smaller than a second ratio of a number of the plurality of second nodules to a surface area of the second region.

An apparatus for treating a substrate of the present invention includes a buffer unit, an inversion unit, a first transfer chamber, a second transfer chamber, a first cleaning chamber, and a second cleaning chamber. The first transfer chamber, the inversion unit, and the second transfer chamber are sequentially arranged in one direction. The first cleaning chamber is disposed at one side of the first transfer chamber, and the second cleaning chamber is disposed at one side of the second transfer chamber. A first main transfer robot provided in the first transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the first cleaning chamber. The second main transfer robot provided in the second transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the second cleaning chamber.

A brush cleaning system for cleaning a substrate includes a tank, and a first cylindrical roller, a second cylindrical roller, and a third cylindrical roller disposed in the tank. The brush cleaning system also includes a first cleaning position defined between the first cylindrical roller and the second cylindrical roller, and a second cleaning position defined between the second cylindrical roller and the third cylindrical roller. When the substrate is disposed in the first cleaning position, the first cylindrical roller is configured to clean a first side of the substrate and the second cylindrical roller is configured to clean a second side of the substrate. When the substrate is disposed in the second cleaning position, the second cylindrical roller is configured to clean the second side of the substrate and the third cylindrical roller is configured to clean a first side of the substrate.

Provided are a tool and a method for processing a semiconductor wafer. A processing method includes supporting a semiconductor wafer continuously along a periphery of the semiconductor wafer with an electrically grounded conductive member; and spinning the semiconductor wafer, wherein surface charges induced during spinning are dissipated by movement of electrons from the semiconductor wafer to the electrically grounded conductive member at the periphery of the semiconductor wafer.

A substrate processing device includes a platen, a polishing pad disposed on the platen, a first rotating body, a second rotating body spaced apart from the first rotating body, a caterpillar module disposed on a portion of the polishing pad and engaged with the first rotating body and the second rotating body, and a temperature controller thermally connected to the caterpillar module.