A surface recovery process that restores the hydrophobicity of dielectric surfaces and promotes selective deposition of metal-fill such as molybdenum onto metal-containing surfaces while reducing or preventing growth on the dielectric surfaces. Additionally, the surface recovery process reduces film loss against subsequent wet etching processes such as DHF. The recovery precursor soak is performed with optional UV (concurrent or sequential) to react with silanols on damaged dielectric surface to replenish CH3 and recover hydrophobicity of the dielectric surface. The recovery precursor is a carbon-containing recovery precursor, for example, organohalosilanes, esters, silyl ethers, organoaminosilanes, silyl esters, hydrocarbons, or a combination thereof.

Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, an apparatus includes a semiconductive region, an insulative region that is adjacent to the semiconductive region, and a conductive line that extends across the semiconductive region and at least a portion of the insulative region. The apparatus includes a contact structure that conjoins with the conductive line and that electrically couples the conductive line with the semiconductive region. The apparatus includes a footing structure that conjoins with the conductive line and that penetrates into the insulative region to anchor the conductive line with the insulative region.

A device structure, along with methods of forming such, are described. The device structure includes an interconnection structure disposed over a substrate, a first dielectric layer disposed over the interconnection structure, and a second dielectric layer disposed on the first dielectric layer. The second dielectric layer comprises a dielectric material having a k value greater than about 20 and a band gap less than about 5 eV. The structure further includes a third dielectric layer disposed on the second dielectric layer and a first conductive feature disposed on the third dielectric layer. The first conductive feature includes a first portion extending through the first dielectric layer, the second dielectric layer, and the third dielectric layer and a second portion disposed on the third dielectric layer.