A semiconductor device semiconductor chip mounted to a leadframe that includes an electrically conductive pad. An electrically conductive clip is arranged in a bridge-like position between the semiconductor chip and the electrically conductive pad. The electrically conductive clip is soldered to the semiconductor chip and to the electrically conductive pad via soldering material applied at coupling surfaces facing towards the semiconductor chip and the electrically conductive pad. The device further includes a pair of complementary positioning formations formed by a cavity in the electrically conductive clip and a protrusion (such as a stud bump or a stack of stud bumps) formed in the electrically conductive pad. The complementary positioning formations are mutually engaged to retain the electrically conductive clip in the bridge-like position to avoid displacement during soldering.

An electronic device includes a substrate having first and second conductive traces, a semiconductor die having a transistor with a first terminal and a second terminal, and first and second metal clips. The first metal clip has a first end portion coupled to the first terminal of the transistor, and a second end portion coupled to the first conductive trace of the substrate. The second metal clip has a first end portion coupled to the second terminal of the transistor and a second end portion coupled to the second conductive trace of the substrate, and a middle portion of the second metal clip is spaced apart from and at least partially overlying a portion of the first metal clip.

The purpose of this invention is to provide a semiconductor device that prevents defects in semiconductor elements caused by differences in thermal expansion and maintains low electrical resistance by directly or indirectly laminating an FeNi alloy metal layer onto the front-surface or back-surface electrodes of the semiconductor element. In this invention, an FeNi alloy metal layer is directly or indirectly applied on the surface electrodes of the semiconductor element, and the semiconductor element is connected to a conductor through the FeNi alloy metal layer. Depending on the application, the Ni content of the FeNi alloy metal layer is set within the range of 36% to 45% by weight, and the thickness of the FeNi alloy metal layer is set within the range of 2 m to 20 m.

A semiconductor device includes a first die pad having a main surface, a second die pad having a second main surface, a first switching element connected to the first main surface, a second switching element connected to the second main surface, a first connecting member connecting the first main surface electrode of the first switching element to the second die pad, an encapsulation resin encapsulating the first switching element, the second switching element, the first die pad, the second die pad, and the first connecting member, and leads projecting out of one of the resin side surfaces of the encapsulation resin.

A device includes a first conductive-member which connects to a first electrode on a first face of a chip. A second conductive-member is spaced from the chip and the first conductive-member. A third conductive-member is spaced from the first and second conductive-members. A first connector connects between the second electrode and the second conductive-member. A second connector is opposed to a third electrode on the second face and connects the third electrode and the third conductive-member. A first connecting-member connects the first connector and the second face. A second connecting-member connects the first connector and the second conductive-member. The first connector includes first protruded portions protruded in a first direction from the first conductive-member to the second conductive-member. The second connecting-member is provided to correspond to each of places between the first protruded portions and the second conductive-member.

A variety of footed and leadless semiconductor packages, with either exposed or isolated die pads, are described. Some of the packages have leads with highly coplanar feet that protrude from a plastic body, facilitating mounting the packages on printed circuit boards using wave-soldering techniques.

An electronic device may include an electrically conductive base, an electrically insulative layer attached to the base, and first and second exterior terminals at an exterior surface. A first electrical conductor may be attached to the electrically insulative layer and electrically connected to the first exterior terminal. A semiconductor die may have a first contact at a bottom surface electrically connected to the first electrical conductor, and a second contact at a top surface. A second electrical conductor may be attached to the top surface of the semiconductor die and may be electrically connected to the second exterior terminal. An encapsulant may at least partially encapsulate the electrically conductive base, the first and second exterior terminals, the electrically insulative layer, the first electrical conductor, the semiconductor die, and the second electrical conductor.

A clip-bonded semiconductor package including: a semiconductor die including a bond pad on a top side of the semiconductor die, the bond pad is arranged to receive a bond clip, the bond clip is also arranged to provide electrical connection to the bond pad via a connection part of the bond clip, the bond clip further includes a buffer layer provided to at least the connection part. A hardness of a material of the buffer layer is lower than a hardness of a material of the bond clip.

A semiconductor device includes a semiconductor element having a first electrode and a second electrode, a first conductive member being located on a first side in a thickness direction with respect to the first electrode and having a first reverse surface to face a second side in the thickness direction, a second conductive member being located on the first side in the thickness direction with respect to the second electrode and having a second reverse surface to face the second side in the thickness direction, a first conductive bonding material interposed between the first electrode and the first reverse surface and bonded to the first electrode and the first conductive member, and a second conductive bonding material interposed between the second electrode and the second reverse surface and bonded to the second electrode and the second conductive member. An area of the second reverse surface is smaller than an area of the first reverse surface. A distance between the second electrode and the second reverse surface in the thickness direction is smaller than a distance between the first electrode and the first reverse surface in the thickness direction.

A package includes a semiconductor die disposed on a lead frame. A source contact pad is disposed on the semiconductor die. The package further includes a lead post shared by a plurality of leads that form external terminals of the package. The lead post has a clip-locking feature. A clip connects the source contact pad to the lead post. The clip has a key structure coupled to the clip-locking feature in the lead post.