A method includes depositing a first dielectric layer on a first substrate of a first device die, etching the first dielectric layer to form a trench, depositing a metallic material in the trench and on a top surface of the first dielectric layer, and performing a chemical mechanical polish (CMP) process to remove a portion of the metallic material from the top surface of the first dielectric layer to form a first metal pad. After the performing of the CMP process, the method selectively etches the first metal pad to form recesses at an edge portion of the first metal pad, deposits a second dielectric layer on a second substrate of a second device die, forms a second metal pad in the second dielectric layer, and bonds the second device die to the first device die.

Disclosed herein are methods of forming a microelectronic component. In some embodiments, the method includes providing a substrate, forming a metal feature over the substrate, forming an organic dielectric layer over the element such that the organic dielectric layer covers sidewalls of the metal feature, forming an inorganic dielectric material over the organic dielectric layer, and planarizing the inorganic dielectric material, the organic dielectric layer, and the metal feature. The planarized surface can serve as a hybrid bonding surface. The metal feature is exposed at the hybrid bonding surface.

An element includes a substrate and a surface layer on the substrate. The surface layer includes at least one first region comprising an optically transparent and electrically insulative first material and at least one second region at least partially embedded in the at least one first region. The at least one second region comprises an optically transparent and electrically conductive second material.

A silicon-coated oxidation-resistant copper includes a SiCuO.sub.x layer includes a silicon (Si)-oxygen (O)-copper (Cu) mixed layer formed by depositing silicon (Si). The silicon-coated oxidation-resistant copper includes: a copper layer; the SiCuO.sub.x layer including the silicon (Si)-oxygen (O)-copper (Cu) mixed layer formed on the copper layer; a first silicon (Si)-oxygen (O) mixed layer formed on the SiCuO.sub.x layer; a silicon (Si) layer formed on the first silicon (Si)-oxygen (O) mixed layer; and a second silicon (Si)-oxygen (O) mixed layer formed on the silicon layer (Si) layer.

A semiconductor device capable of suppressing a bonding defect between a bump of a semiconductor chip and a land of a wiring substrate is provided. The semiconductor device includes the semiconductor chip. The semiconductor chip includes a semiconductor substrate, a wiring layer, a protective film, a first bump and a second bump. The wiring layer is formed on the semiconductor substrate and has a first bonding pad and a second bonding pad. The first bonding pad has a first upper surface. The second bonding pad has a second upper surface. The protective film is formed on the wiring layer so as to cover the first bonding pad and the second bonding pad. The protective film has a first opening portion overlapping the first bonding pad and penetrating through the protective film, and a second opening portion overlapping the second bonding pad and penetrating through the protective film.

A semiconductor device, including: a semiconductor substrate with a main surface; and a surface electrode provided at the main surface of the semiconductor substrate, the surface electrode having a nickel (Ni) film that includes a fibrous-structure Ni film, the fibrous-structure Ni film containing Ni crystal grains grown to form a fibrous shape.

Provided is a multi-dies stacking structure, which includes: a plurality of core dies stacked, wherein each core die comprises a first sub-core die and a second sub-core die vertically stacked; adjacent core dies are interconnected through micro-metal bumps, and the first sub-core die is interconnected with the second sub-core die through hybrid bonding members.

A microelectronic assembly and a method of forming same. The assembly includes: first and second microelectronic structures; and an interface layer between the two microelectronic structures including dielectric portions in registration with dielectric layers of each of the microelectronic structures, and electrically conductive portions in registration with electrically conductive structures of each of the microelectronic structures, wherein the dielectric portions include an oxide of a metal, and the electrically conductive portions include the metal.

The present disclosure relates to methods, devices, systems, and techniques for managing bonding structures in semiconductor devices. An example semiconductor device includes a first semiconductor structure, a bonding structure, and a second semiconductor structure stacked along a first direction. The first semiconductor structure is bonded to the second semiconductor structure through the bonding structure. The bonding structure includes a first group of contact structures, a second group of contact structures, and a dielectric material surrounding the first group of contact structures and the second group of contact structures. A first contact structure of the first group of contact structures is adjacent to a second contact structure of the second group of contact structures along a second direction perpendicular to the first direction. The first contact structure includes a first conductive material. The second contact structure includes the first conductive material and an oxide.

A process for forming silver-containing wettable material structures, wherein, on a metal layer containing aluminum, a zinc layer is deposited, the zinc layer reacting with the metal layer and creating a surface micro-roughness; the zinc layer is removed; and a wettable layer containing silver is deposited by vapor deposition. The wettable layer is formed by an adhesion layer, containing titanium or chromium; a barrier layer, containing nickel, on the adhesion layer; and a bonding layer, containing silver, on the barrier layer.