A substrate processing method using a substrate processing apparatus which comprises a process chamber in which a reaction space is formed to process a substrate in which a composite layer pattern having a plurality of first insulating layers and a plurality of second insulating layers alternately stacked thereon is formed, a substrate support unit, a gas distribution unit, and a plasma reactor, the method comprising the steps of: heating the substrate support unit and the gas distribution unit such that a temperature of the gas distribution unit is maintained equal to or lower than a temperature of the substrate support unit; supplying a reactive gas including a halogen-containing gas to the plasma reactor; generating radicals by applying power to the plasma reactor to activate the halogen-containing gas; and at least partially etching the plurality of first insulating layers in a lateral direction selectively with respect to the plurality of second insulating layers by supplying the radicals onto the substrate mounted on the substrate support unit through the gas distribution unit.

A semiconductor substrate carrying container, such as a front opening unified pod or shipping box, that includes a container shell having a plurality of walls, a front, and a rear, the plurality of walls defining an interior space that is sized to be able to receive a plurality of semiconductor substrates or trays, and a support structure configured to receive the plurality of semiconductor substrates or trays. The support structure includes at least one support wall that is formed by a plurality of corrugation portions provided along opposite sides of a centerline along a vertical plane at a center of the at least one support wall.

The present invention provides an apparatus for treating a substrate. The apparatus of processing a substrate includes: a treatment bath having an receiving space accommodating treatment liquid, and treating a plurality of substrates; and a supporting unit supporting the substrates in the treatment bath, wherein the supporting unit includes: a support having a first supporting rod supporting end portions of the substrates in a vertical state; and a fixing plate coupled to the support and fixing the support, a plurality of first slots in which edges of the substrates are inserted is formed at the first supporting rod, each of the plurality of first slots is defined by a first side, a second side facing the first side, and a bottom, a front and a rear of the first slot are open toward the receiving space, and the bottom of the first slot comprises contact protrusions protruding upward from a lower end of the first side of the first slot and supporting lower end portions of the substrates.

A cassette handle includes a body, a first foot, and a second foot. When in a position following the application of a force to the body, the first foot and the second foot can engage a cassette for semiconductor wafers or samples. When in another position following the removal of the applied force, or absent an application of a force to the body, the first foot and the second foot are disengaged from the cassette. Recesses and/or markers on the first foot and the second foot indicate when the first foot and the second foot are correctly engaged with the cassette. Where the cassette handle includes both recesses and markers, the markers may be inset within the recesses.