A semiconductor package may include a package substrate; first semiconductor chips sequentially stacked on an upper surface of the package substrate; a second semiconductor chip on an uppermost first semiconductor chip among the first semiconductor chips, the second semiconductor chip having an overhang region protruding from one side of the uppermost first semiconductor chip and an overlapping region overlapping the uppermost first semiconductor chip, the second chip pads including first bonding pads in the overhang region and second bonding pads in the overlapping region; first conductive bumps respectively on the first bonding pads; second conductive bumps respectively on the second bonding pads; vertical wires extending from the first conductive bumps to substrate pads of the package substrate, respectively; and a molding member covering the first semiconductor chips, the second semiconductor chip, and the vertical wires.

An atmospheric pressure plasma apparatus and method are disclosed that operate with a multigas mixture to provide a high concentration of reactive neutral species for cleaning and activating the surfaces of substrates, including those with metal interconnects embedded in the substrate.

A solder reflow system that includes a vacuum chamber and a sample chuck in the vacuum chamber to support a semiconductor wafer to be processed. The solder reflow system further include a heating element coupled to the vacuum chamber and configured to heat the semiconductor wafer, a thermocouple connected to the sample chuck to measure a temperature of the semiconductor wafer, a pyrometer positioned to detect an optical signal from the semiconductor wafer to estimate the temperature of the semiconductor wafer. The control system is configured to control the heating element to heat the semiconductor wafer, obtain one or more measurements of the temperature of the semiconductor wafer from the thermocouple and one or more estimates of the temperature of the semiconductor wafer from the pyrometer during the heating of the semiconductor wafer, and determine a modification of the heating of the semiconductor wafer based on the obtained measurements.

A method and device for modifying a surface of a substrate with a plasma in an inert gas environment, comprises enclosing the substrate in a chamber having surrounding sidewalls and a movable coverplate above the surrounding sidewalls with a gap therebetween, affixing a plasma source to the movable coverplate having a plasma outlet through the coverplate into the chamber, purging the chamber with inert gas sufficient to reduce an oxygen concentration of the chamber to several orders of magnitude less than in air, the inert gas entering through and inlet to the chamber and exiting through an outlet from the chamber, and scanning and activating the plasma source affixed to the cover plate over the substrate, such as to expose the surface of the substrate to a reactive species generated by the plasma delivered through the plasma outlet. An inert gas environment is maintained within the chamber throughout the scanning.

A semiconductor manufacturing apparatus includes a flux container defining an accommodation space, the accommodation space configured to accommodate flux, a head tool configured to pick up and position a semiconductor device, semiconductor device including a connection terminal, and a vibration generator configured to apply vibrations to the flux container.