A batch processing oven includes a processing chamber, a magnet, and a rack. The processing chamber includes a gas inlet on a first side and a gas outlet on a second side opposite the first side, the gas inlet is configured to direct a hot gas into the processing chamber and the gas outlet is configured to exhaust the convective energy in parallel with the radiative energy from the walls. The magnet is arranged such that its north pole will be formed on the first side of the processing chamber and its south pole will be formed on the second side of the processing chamber. The rack is configured to be positioned between the first and second ends of the processing chamber and is configured to support a plurality of vertically spaced-apart substrates.

A substrate processing apparatus includes a loading and unloading unit having a first side surface through which a container accommodating a substrate is loaded and unloaded, and a second side surface opposite to the first side surface, a substrate transport unit extending along a first horizontal direction perpendicular to the second side surface, and a plurality of batch processing units adjacent to one another along a longitudinal direction of the substrate transport unit. Each of the plurality of batch processing units includes a processing container configured to accommodate and process a plurality of substrates, a gas supply unit configured to supply a gas into the processing container, and an exhaust unit configured to exhaust the gas inside the processing container. A first maintenance area, used for attending to a maintenance of the plurality of batch processing units, is provided above the exhaust unit.

A substrate processing method according to an aspect of the present disclosure includes performing a batch processing to process a plurality of substrates at once, performing a single-substrate processing to process the plurality of substrate one by one after the batch processing, identifying a position of a cutout provided on an outer periphery of a substrate subjected to the batch processing, and rotating the substrate such that the identified position of the cutout reaches a first position. The performing the single-substrate processing includes drying the substrate, and the rotating the substrate is performed before the drying the substrate.

A semiconductor manufacturing system is provided. The system includes a semiconductor process tool. The semiconductor process tool includes a load port including a plurality of positioning pins positioned on a top surface thereof. The system further includes a cleaning device used to be positioned on the load port. The cleaning device include a housing, a gas driving member, and a number of gas guides. The housing has a lower plate. The gas driving member is positioned in the housing. The gas guides are positioned on the lower plate of the housing and fluidly connected to the gas driving member. When the cleaning device is positioned on the load port, each of the positioning pins of the load port is covered by and surrounded by the lower opening of one of the gas guides.

A method includes loading a wafer having a catalytic metal thereon into a processing chamber, introducing a hydrocarbon precursor into the processing chamber, pyrolyzing the hydrocarbon precursor; conducting the pyrolyzed hydrocarbon precursor to the catalytic metal to form a graphene layer on the catalytic metal at a temperature lower than about 400 C.

According to one embodiment, there is provided a semiconductor manufacturing tool that is capable of further facilitating an electrochemical process. The semiconductor manufacturing tool according to the embodiment includes a plurality of process baths, an anode and a cathode, and an electrical circuit. Each of the plurality of process baths is capable of containing a substrate processing liquid and a first substrate. The anode and the cathode are provided for each of the process baths. The electrical circuit electrically connects a plurality of first substrates held in the substrate processing liquid via the anode and the cathode and supplies electrical power via the anode and the cathode for subjecting the plurality of first substrates to an electrochemical process.

Disclosed is a substrate treating apparatus provided with a treating block. The treating block includes a wet transportation region adjoining a batch treatment region and a single-wafer transportation region. The wet transportation region contains a second posture turning mechanism provided on an extension line of a line of six batch process tanks and configured to turn a posture of substrates, on which immersion treatment is performed, from vertical to horizontal, a belt conveyor mechanism configured to receive the substrates in a horizontal posture one by one from the second posture turning mechanism and transport the substrates to the single-wafer transportation region, and a liquid supplying unit configured to supply a liquid to wet the substrates, transported by the belt conveyor mechanism, with the liquid.

A substrate processing apparatus includes a transfer block, a processing block, and a buffering unit. The transfer block includes a bulk transporting mechanism that stores substrates into a carrier, and a first orientation converting mechanism that converts the substrates into a vertical orientation. The processing block includes a batch processing area, a single-wafer processing area, a single-wafer transporting area, and a batch substrate transporting area. In the batch processing area, batch processing baths and a second orientation converting mechanism for converting the substrates into a horizontal orientation are provided. In the single-wafer processing area, for example, a single-wafer processing chamber is provided. In the single-wafer transporting area, a center robot-ER is provided. In the batch substrate transporting area, a first transporting mechanism is provided. The bulk transporting mechanism-HER transports the substrates to the first orientation converting mechanism IS, and transports the substrates from the buffering unit.