The semiconductor structure includes: a substrate; a first insulating dielectric layer disposed on the substrate; a front layer structure disposed in the first insulating dielectric layer; a second insulating dielectric layer disposed on the first insulating dielectric layer; a third insulating dielectric layer disposed on the second insulating dielectric layer; a current layer structure disposed in the third insulating dielectric layer, including a plurality of first conductive wires spaced apart from each other; a first interconnection structure passing through the second insulating dielectric layer to connect a portion of the first conductive wires and the front layer structure; and a second interconnection structure passing through the first insulating dielectric layer and the second insulating dielectric layer to connect a portion of the first conductive wires, the first interconnection structure and the second interconnection structure being isolated from each other.

Reliability is improved in a semiconductor device in which an annular trench is formed around a through hole. A semiconductor device includes a semiconductor substrate, a through wiring, a back surface insulating film, and an annular trench. A wiring layer is formed on a front surface of the semiconductor substrate. The through hole penetrates the semiconductor substrate. The through wiring is formed along a side surface of the through hole. The back surface insulating film covers a back surface of the semiconductor substrate with respect to the front surface. The annular trench surrounds the periphery of the through hole when viewed from a direction perpendicular to the back surface, and a cavity closed by the back surface insulating film when viewed from the direction parallel to the back surface is formed inside.