H10P72/7424

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
20260076227 · 2026-03-12 ·

A method includes: forming an interposer die using a substrate, the interposer die including a plurality of conductive vias in the substrate; bonding the interposer die to a first redistribution layer (RDL); encapsulating the interposer die; forming a second RDL over the interposer die on a side opposite to the first RDL; bonding a first semiconductor die with one of the first RDL and the second RDL; and encapsulating the first semiconductor die.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

Substrate and preparation method thereof, integrated passive device, and electronic apparatus

Provided are a substrate, a method for preparing the substrate, an integrated passive device, and an electronic apparatus. The method for preparing the substrate includes: providing a base substrate including at least one blind via, wherein the base substrate includes a first surface and a second surface disposed oppositely, a blind via extends from a first surface side to interior of the base substrate, and an aperture of the blind via gradually decreases in a direction from the first surface to the second surface; forming a connection electrode in the blind via; thinning the base substrate along a direction from the second surface to the first surface, wherein the blind via on the thinned base substrate forms a via hole penetrating the base substrate.

ELECTRONIC PACKAGE AND MANUFACTURING METHOD THEREOF

An electronic package and a manufacturing method thereof are provided, in which a magnetically permeable member and a plurality of supporting members having conductive through vias are disposed on a carrier structure having a circuit layer, the magnetically permeable member is located between two supporting members, and a conductive member is disposed on the supporting members to cover the magnetically permeable member, so that the circuit layer, the conductive through vias and the conductive member form a coil surrounding the magnetically permeable member to increase the inductance.

Semiconductor package and fabricating method thereof

A semiconductor package structure and a method for making a semiconductor package. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a connect die that routes electrical signals between a plurality of other semiconductor die.

InFO-POP structures with TIVs having cavities

A method includes dispensing sacrificial region over a carrier, and forming a metal post over the carrier. The metal post overlaps at least a portion of the sacrificial region. The method further includes encapsulating the metal post and the sacrificial region in an encapsulating material, demounting the metal post, the sacrificial region, and the encapsulating material from the carrier, and removing at least a portion of the sacrificial region to form a recess extending from a surface level of the encapsulating material into the encapsulating material.

PACKAGE STRUCTURE

A package structure includes an insulating encapsulation, a semiconductor die, and a redistribution circuit structure. The semiconductor die is encapsulated in the insulating encapsulation. The redistribution circuit structure includes conductive patterns, wherein the conductive patterns each comprise a first portion, at least one second portion, and at least one connecting portion. A first edge of the at least one connecting portion is connected to the first portion, and a second edge of the at least one connecting portion is connected to the at least one second portion, wherein the first edge is opposite to the second edge, and a length of the first edge is greater than a length of the second edge.

Semiconductor Devices and Methods of Making Bridge Modules and Chiplet Structures Having the Bridge Modules

A semiconductor device has a bridge die comprising a contact pad. An electrical component is mounted to the bridge die to form a bridge module. The bridge module is disposed over a carrier. A first conductive layer is formed on the carrier. A first insulating layer is formed over the first conductive layer and bridge module. An opening is formed through the first insulating layer to expose the first conductive layer. A second conductive layer is formed over the first insulating layer. The carrier is removed. A first semiconductor die is electrically coupled to the electrical component and bridge die.

Electronic package, packaging substrate and fabricating method thereof

An electronic package, a packaging substrate and a fabricating method are provided, in which a conductive bump pad is formed on an electrical contact pad of the packaging substrate, so that when an electronic element is bonded to the packaging substrate via a solder material in a flip-chip process, the conductive bump pad can guide the flow of the solder material. Therefore, the problem of empty soldering caused by the solder material not effectively contacting with the electrical contact pad can be avoided.