H10W40/735

Power semiconductor module arrangement and method for producing the same
12564094 · 2026-02-24 · ·

A power semiconductor module arrangement comprises a substrate comprising a dielectric insulation layer, and a first metallization layer attached to the dielectric insulation layer, at least one semiconductor body mounted on the first metallization layer, and a first layer comprising an encapsulant, the first layer being arranged on the substrate and covering the first metallization layer the at least one semiconductor body, wherein the first layer is configured to release liquid or oil at temperatures exceeding a defined threshold temperature.

Chip package with pass through heat spreader
12564052 · 2026-02-24 · ·

Chip packages, electronic devices and method for making the same are described herein. The chip packages and electronic devices have a heat spreader disposed over a plurality of integrated circuit (IC) devices. The heat spreader has an opening through which a protrusion from an overlaying cover extends into contact with one or more of the IC devices to provide a direct heat transfer path to the cover. Another one or more other IC devices have a heat transfer path to the cover through the heat spreader. The separate heat transfer paths allow more effective thermal management of the IC devices of the chip package.

Semiconductor module having a plurality of heat sink plates

A semiconductor module includes a substrate, a semiconductor element and a heat sink plate. The substrate is included in a circuit board. The semiconductor element is disposed at the heat sink plate inside the substrate. A fluid is sealed inside the heat sink plate.