A method of electroplating a metal into features, having substantially different depths, of a partially fabricated electronic device on a substrate is provided. The method includes adsorbing accelerator into the bottom of recessed features; partially filling the features by a bottom up fill mechanism in an electroplating solution; diffusing leveler into shallow features to decrease the plating rate in shallow features as compared to deep features; and electroplating more metal into the features such that the height of metal in deep features is similar to the height of metal in shallow features.

In this mounting device (10) for mounting a semiconductor chip (100) on a substrate (104), a controller (50) is provided with: a mounter for pressing the semiconductor chip (100) to the substrate (104) in a state where a cover film (110) is interposed between the semiconductor chip (100) and a thermocompression tool (16), and for heating and then cooling the thermocompression tool (16) to mount the semiconductor chip (100) on the substrate (104); and a separator for heating the thermocompression tool (16) after the semiconductor chip (100) has been mounted, and for raising a mounting head (17) to be separated from the cover film (110).

A solder ball attaching apparatus includes a working die, having an internal space maintained in a vacuum state, and a plurality of lifting members installed on the working die to be movable upwardly and downwardly. The working die may be provided with an upper plate on which the lifting members are installed. The upper plate may be provided with an insertion groove, into which an upper end portion of the lifting member is inserted when the lifting member is lowered, and a locking groove into which a lower end portion of the lifting member is inserted when the lifting member is raised. The lifting member may be lowered by a chip when the chip is seated on the lifting member and may be raised by elastic restoring force when the chip is removed.

A system and a method for sintering one or more structures on a base includes at least one sinter unit that is configured to sinter the structures on the base. The sinter unit is further configured to position at least one film layer to be in proximity to the structures on the base, and apply force and provide heat to the film layer and the structures on the base for the structures to sinter. A corresponding method is further described.

A semiconductor processing apparatus includes a process chamber that defines an enclosure. The enclosure includes a substrate support configured to support a substrate and rotate the substrate about a central axis of the process chamber. The substrate support is also configured to move vertically along the central axis and position the substrate at multiple locations in the enclosure. The apparatus also includes one or more UV lamps configured to irradiate a top surface of the substrate supported on the substrate support.