A semiconductor memory device includes a substrate, a first semiconductor pattern and a second semiconductor pattern, the first semiconductor pattern and the second semiconductor pattern extending in a first horizontal direction above the substrate, and spaced apart from each other, the first semiconductor pattern comprising a channel region, a source region, and a drain region, the channel region, source region, and drain region arranged in the first horizontal direction with the channel region therebetween, a first word line and a second word line, the first word line and the second word line extending in the second horizontal direction above the first semiconductor pattern, and spaced apart from each other in the vertical direction, a bit line connected to the source region of the first semiconductor pattern, and the bit line extending in the vertical direction, and a cell capacitor connected to the drain region of the first semiconductor pattern.