Forming a semiconductor device includes forming over a surface of a fin a stack of channel regions separated by respective gaps and applying a surface treatment to sidewalls of the channel regions and to the surface of the fin thus causing the sidewalls of the channel regions and the surface of the fin to be less susceptible to deposition of a sacrificial material layer, relative to prior to the surface treatment, and depositing the sacrificial material layer on the channel regions and on the surface of the fin, wherein the surface treatment causes deposition of the sacrificial material to occur to a lesser extent on the sidewalls of the channel regions and the surface of the fin relative to the tops and bottoms of the channel regions, and etching back the sacrificial material layer to form sacrificial material structures within the respective gaps.

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.