An electronic device includes: a first substrate; an element layer disposed on the first substrate and including an active area and a peripheral area surrounding the active area; a first bonding pad disposed on the peripheral area of the element layer; a second substrate disposed opposite to the first substrate; a second bonding pad disposed on the second substrate and including a first part and a second part surrounding the first part; and a bonding material disposed between the first part of the second bonding pad and the first bonding pad and between the second part of the second bonding pad and the first bonding pad.

In this mounting device (10) for mounting a semiconductor chip (100) on a substrate (104), a controller (50) is provided with: a mounter for pressing the semiconductor chip (100) to the substrate (104) in a state where a cover film (110) is interposed between the semiconductor chip (100) and a thermocompression tool (16), and for heating and then cooling the thermocompression tool (16) to mount the semiconductor chip (100) on the substrate (104); and a separator for heating the thermocompression tool (16) after the semiconductor chip (100) has been mounted, and for raising a mounting head (17) to be separated from the cover film (110).

A method of manufacturing a semiconductor device includes reducing a thickness of a device wafer bonded to a carrier wafer, wherein the device wafer includes a device, a portion of the carrier wafer beyond the device, in a plan view, is called a non-bonding area, and a portion of the carrier wafer overlapping the device, in the plan view, is called a device area. The method further includes performing an etching process on the non-bonding area of the carrier wafer, wherein the etching process is performed completely outside the device area of the carrier wafer.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.