The present technology includes semiconductor devices and methods with improved contact resistivity. Semiconductor devices include a substrate base, a silicon oxide disposed on the base defining one or more features, a non-magnetic transition-metal doped contact silicide layer disposed on the substrate in the one or more features, and at least a first metal layer. The non-magnetic transition-metal doped contact silicide layer includes a non-magnetic transition-metal, a first metal, and a silicon containing compound, and includes greater than or about 8.0 E+13 per cm.sup.2 non-magnetic transition-metal atoms. The first metal layer includes the first metal and overlies the non-magnetic transition-metal doped contact silicide layer.